{"title":"半太赫兹SiGe BiCMOS技术","authors":"H. Rucker, B. Heinemann, A. Fox","doi":"10.1109/SIRF.2012.6160164","DOIUrl":null,"url":null,"abstract":"This paper addresses the integration of a new generation of high-speed SiGe HBTs with fT/ fmax of 300/500 GHz and minimum CML ring oscillator gate delays of 2.0 ps in a 0.13 μm BiCMOS technology. Technological measures for improving the speed of the HBTs compared to our first 0.13 μm BiCMOS generation are discussed. These include scaling of lateral device dimensions and doping profiles as well as a reduced thermal budget and reduced salicide resistance.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"190","resultStr":"{\"title\":\"Half-Terahertz SiGe BiCMOS technology\",\"authors\":\"H. Rucker, B. Heinemann, A. Fox\",\"doi\":\"10.1109/SIRF.2012.6160164\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper addresses the integration of a new generation of high-speed SiGe HBTs with fT/ fmax of 300/500 GHz and minimum CML ring oscillator gate delays of 2.0 ps in a 0.13 μm BiCMOS technology. Technological measures for improving the speed of the HBTs compared to our first 0.13 μm BiCMOS generation are discussed. These include scaling of lateral device dimensions and doping profiles as well as a reduced thermal budget and reduced salicide resistance.\",\"PeriodicalId\":339730,\"journal\":{\"name\":\"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"190\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIRF.2012.6160164\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2012.6160164","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper addresses the integration of a new generation of high-speed SiGe HBTs with fT/ fmax of 300/500 GHz and minimum CML ring oscillator gate delays of 2.0 ps in a 0.13 μm BiCMOS technology. Technological measures for improving the speed of the HBTs compared to our first 0.13 μm BiCMOS generation are discussed. These include scaling of lateral device dimensions and doping profiles as well as a reduced thermal budget and reduced salicide resistance.
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