S. Yoneda, Kenya Adachi, K. Kobayashi, Daisaku Matsukawa, Mamoru Sasaki, T. Itabashi, Toshiaki Shirasaka, T. Shibata
{"title":"一种新型光敏聚酰亚胺杂化粘接材料","authors":"S. Yoneda, Kenya Adachi, K. Kobayashi, Daisaku Matsukawa, Mamoru Sasaki, T. Itabashi, Toshiaki Shirasaka, T. Shibata","doi":"10.1109/ECTC32696.2021.00118","DOIUrl":null,"url":null,"abstract":"Cu/insulating material hybrid bonding technology was a promising process for high performance three-dimensional integrated package. A novel polyimide (PI) and thermal compression bonding (TCB) process were proposed for chip to wafer hybrid bonding. The new PI was developed by re-designing key components of the formulation. It showed high adhesion after TCB and high reliability performance. For the PI to PI bonding process evaluation, there were not any visible voids after pre-bonding at 250-350 °C and after TCB at 300 °C. Cu/PI co-planarization process was confirmed, and the PI showed a practical removal rate even though the PI was cured at high temperature. Furthermore, the PI showed highly smooth surface after CMP.","PeriodicalId":351817,"journal":{"name":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A Novel Photosensitive Polyimide Adhesive Material for Hybrid Bonding Processing\",\"authors\":\"S. Yoneda, Kenya Adachi, K. Kobayashi, Daisaku Matsukawa, Mamoru Sasaki, T. Itabashi, Toshiaki Shirasaka, T. Shibata\",\"doi\":\"10.1109/ECTC32696.2021.00118\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Cu/insulating material hybrid bonding technology was a promising process for high performance three-dimensional integrated package. A novel polyimide (PI) and thermal compression bonding (TCB) process were proposed for chip to wafer hybrid bonding. The new PI was developed by re-designing key components of the formulation. It showed high adhesion after TCB and high reliability performance. For the PI to PI bonding process evaluation, there were not any visible voids after pre-bonding at 250-350 °C and after TCB at 300 °C. Cu/PI co-planarization process was confirmed, and the PI showed a practical removal rate even though the PI was cured at high temperature. Furthermore, the PI showed highly smooth surface after CMP.\",\"PeriodicalId\":351817,\"journal\":{\"name\":\"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC32696.2021.00118\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC32696.2021.00118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Novel Photosensitive Polyimide Adhesive Material for Hybrid Bonding Processing
Cu/insulating material hybrid bonding technology was a promising process for high performance three-dimensional integrated package. A novel polyimide (PI) and thermal compression bonding (TCB) process were proposed for chip to wafer hybrid bonding. The new PI was developed by re-designing key components of the formulation. It showed high adhesion after TCB and high reliability performance. For the PI to PI bonding process evaluation, there were not any visible voids after pre-bonding at 250-350 °C and after TCB at 300 °C. Cu/PI co-planarization process was confirmed, and the PI showed a practical removal rate even though the PI was cured at high temperature. Furthermore, the PI showed highly smooth surface after CMP.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
