团簇预成形沉积了具有低SBH和高扩散势垒的无定形WSin (n = 12)插入膜，用于Cu直接接触

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-01 DOI:10.1109/IEDM.2017.8268442

N. Okada, N. Uchida, S. Ogawa, K. Endo, T. Kanayama

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引用次数: 0

摘要

由W原子封装的Sin笼团簇组成的非晶WSin (n = 12)薄膜的插入证明，在W/n- si结处的SBH降至0.32 eV，在W/Ge/p-Si结处的SBH降至0.51 eV，同时显著延长Cu MOS电容器在100°C下5 MV/cm应力下的TDDB寿命至> 10年。在热壁反应器中使用WF6和SiH4气源形成了具有良好接触孔覆盖率的薄膜。这些薄膜特性使得在CMOS中S/D处铜直接接触成为可能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Cluster-preforming-deposited amorphous WSin (n = 12) insertion film of low SBH and high diffusion barrier for direct Cu contact

The insertion of an amorphous WSin (n = 12) film composed of W-atom-encapsulated Sin cage clusters is demonstrated to reduce the SBH to 0.32 eV at W/n-Si and to 0.51 eV at W/Ge/p-Si junctions, while significantly extending the estimated TDDB lifetime to > 10 years at 100 °C under 5 MV/cm stress for Cu MOS capacitors. This film was formed with an excellent contact hole coverage by using WF6 and SiH4 gas sources in a hot-wall thermal reactor. These film properties enable the direct Cu contact at S/D in CMOS.

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2017 IEEE International Electron Devices Meeting (IEDM)

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