磷植入形成的GeSn n - finfet与NiGeSn触点

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242315

Y. Chuang, Hsien-chih Huang, Jiun-Yun Li

{"title":"磷植入形成的GeSn n - finfet与NiGeSn触点","authors":"Y. Chuang, Hsien-chih Huang, Jiun-Yun Li","doi":"10.23919/SNW.2017.8242315","DOIUrl":null,"url":null,"abstract":"We report n-FinFETs with a high drive current of 108 Aim and the best SS of 138 mV/dec. A higher drive current was achieved by the reduction of series S/D resistance. NiGeSn/n+-GeSn contact formation was done by rapid thermal annealing below 400 °C. Contact resistivity was characterized by circular transmission line model. The contact resistance decreases with the carrier concentration or Sn fraction in GeSn films with the lowest contact resistivity of 3.8×10−8 Ω-cm2.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"GeSn N-FinFETs and NiGeSn contact formation by phosphorus implant\",\"authors\":\"Y. Chuang, Hsien-chih Huang, Jiun-Yun Li\",\"doi\":\"10.23919/SNW.2017.8242315\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report n-FinFETs with a high drive current of 108 Aim and the best SS of 138 mV/dec. A higher drive current was achieved by the reduction of series S/D resistance. NiGeSn/n+-GeSn contact formation was done by rapid thermal annealing below 400 °C. Contact resistivity was characterized by circular transmission line model. The contact resistance decreases with the carrier concentration or Sn fraction in GeSn films with the lowest contact resistivity of 3.8×10−8 Ω-cm2.\",\"PeriodicalId\":424135,\"journal\":{\"name\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2017.8242315\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

我们报道了高驱动电流为108 Aim和最佳SS为138 mV/dec的n- finfet。通过降低串联S/D电阻，实现了更高的驱动电流。NiGeSn/n+-GeSn接触形成通过400℃以下快速热退火完成。采用圆形传输线模型对接触电阻率进行表征。GeSn薄膜的接触电阻随载流子浓度或Sn含量的增加而减小，接触电阻最低为3.8×10−8 Ω-cm2。

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GeSn N-FinFETs and NiGeSn contact formation by phosphorus implant

We report n-FinFETs with a high drive current of 108 Aim and the best SS of 138 mV/dec. A higher drive current was achieved by the reduction of series S/D resistance. NiGeSn/n⁺-GeSn contact formation was done by rapid thermal annealing below 400 °C. Contact resistivity was characterized by circular transmission line model. The contact resistance decreases with the carrier concentration or Sn fraction in GeSn films with the lowest contact resistivity of 3.8×10⁻⁸ Ω-cm².

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2017 Silicon Nanoelectronics Workshop (SNW)

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