{"title":"用于DNA生物分子检测的介电调制三金属栅极MOSFET (TMGAA)","authors":"Anubha Goel, Sonam Rewari, S. Verma, R. Gupta","doi":"10.1109/EDKCON.2018.8770406","DOIUrl":null,"url":null,"abstract":"Dielectric Restrained Triple Metal Gate All Around (TG GAA)MOSFET is investigated as a bio-sensor to nail its applicability in biomedical field for DNA molecule and neutral species detection in particular proteins (Biotin & Streptavidin). In this paper nanoparticle with different bio molecular concentrations and different permittivity have been inserted in the cavity inside the oxide layer. The mutation in the drain current (Ids)and the threshold voltage (vth)is then studied in order to assimilate the sensitivity of the MOSFET. The performance of Triple Metal Gate All Around (TG GAA)MOSFET has been compared with that of Dual Metal Gate All Around (DG GAA)MOSFET and Single Metal Gate All Around (SG GAA)MOSFET. Nanogap Embedded TGGAA MOSFET is advantageous from the integration point of view due to the compatibility with CMOS process of the forthcoming silicon based Lab on Chip Systems as well as increased sensitivity.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Dielectric Modulated Triple Metal Gate All Around MOSFET (TMGAA)for DNA Bio-Molecule Detection\",\"authors\":\"Anubha Goel, Sonam Rewari, S. Verma, R. Gupta\",\"doi\":\"10.1109/EDKCON.2018.8770406\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dielectric Restrained Triple Metal Gate All Around (TG GAA)MOSFET is investigated as a bio-sensor to nail its applicability in biomedical field for DNA molecule and neutral species detection in particular proteins (Biotin & Streptavidin). In this paper nanoparticle with different bio molecular concentrations and different permittivity have been inserted in the cavity inside the oxide layer. The mutation in the drain current (Ids)and the threshold voltage (vth)is then studied in order to assimilate the sensitivity of the MOSFET. The performance of Triple Metal Gate All Around (TG GAA)MOSFET has been compared with that of Dual Metal Gate All Around (DG GAA)MOSFET and Single Metal Gate All Around (SG GAA)MOSFET. Nanogap Embedded TGGAA MOSFET is advantageous from the integration point of view due to the compatibility with CMOS process of the forthcoming silicon based Lab on Chip Systems as well as increased sensitivity.\",\"PeriodicalId\":344143,\"journal\":{\"name\":\"2018 IEEE Electron Devices Kolkata Conference (EDKCON)\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Electron Devices Kolkata Conference (EDKCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDKCON.2018.8770406\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDKCON.2018.8770406","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dielectric Modulated Triple Metal Gate All Around MOSFET (TMGAA)for DNA Bio-Molecule Detection
Dielectric Restrained Triple Metal Gate All Around (TG GAA)MOSFET is investigated as a bio-sensor to nail its applicability in biomedical field for DNA molecule and neutral species detection in particular proteins (Biotin & Streptavidin). In this paper nanoparticle with different bio molecular concentrations and different permittivity have been inserted in the cavity inside the oxide layer. The mutation in the drain current (Ids)and the threshold voltage (vth)is then studied in order to assimilate the sensitivity of the MOSFET. The performance of Triple Metal Gate All Around (TG GAA)MOSFET has been compared with that of Dual Metal Gate All Around (DG GAA)MOSFET and Single Metal Gate All Around (SG GAA)MOSFET. Nanogap Embedded TGGAA MOSFET is advantageous from the integration point of view due to the compatibility with CMOS process of the forthcoming silicon based Lab on Chip Systems as well as increased sensitivity.