K. Kim, Y. Sakai, D. Krishnamurthy, S. Hasegawa, H. Asahi
{"title":"GaAs衬底上TlInGaAsN/TlGaAsN三量子阱的生长与表征","authors":"K. Kim, Y. Sakai, D. Krishnamurthy, S. Hasegawa, H. Asahi","doi":"10.1109/ICIPRM.2010.5516273","DOIUrl":null,"url":null,"abstract":"TlInGaAsN/TlGaAsN triple quantum wells (TQWs) with different In and N concentration in the quantum wells (QWs) and barriers were grown by gas-source molecular beam epitaxy. The higher Tl incorporation was obtained for the TlInGaAsN/TlGaAsN TQWs having higher N concentration in the QWs region. Temperature dependencies of the photoluminescence (PL) spectra for the TlInGaAsN /TlGaAsN TQWs with different Tl incorporation in active region were compared and studied. Reduction in the temperature dependence of the PL peak energy was observed by increased Tl incorporation in the active region.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth and characterization of TlInGaAsN/TlGaAsN triple quantum wells on GaAs substrates\",\"authors\":\"K. Kim, Y. Sakai, D. Krishnamurthy, S. Hasegawa, H. Asahi\",\"doi\":\"10.1109/ICIPRM.2010.5516273\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"TlInGaAsN/TlGaAsN triple quantum wells (TQWs) with different In and N concentration in the quantum wells (QWs) and barriers were grown by gas-source molecular beam epitaxy. The higher Tl incorporation was obtained for the TlInGaAsN/TlGaAsN TQWs having higher N concentration in the QWs region. Temperature dependencies of the photoluminescence (PL) spectra for the TlInGaAsN /TlGaAsN TQWs with different Tl incorporation in active region were compared and studied. Reduction in the temperature dependence of the PL peak energy was observed by increased Tl incorporation in the active region.\",\"PeriodicalId\":197102,\"journal\":{\"name\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2010.5516273\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5516273","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth and characterization of TlInGaAsN/TlGaAsN triple quantum wells on GaAs substrates
TlInGaAsN/TlGaAsN triple quantum wells (TQWs) with different In and N concentration in the quantum wells (QWs) and barriers were grown by gas-source molecular beam epitaxy. The higher Tl incorporation was obtained for the TlInGaAsN/TlGaAsN TQWs having higher N concentration in the QWs region. Temperature dependencies of the photoluminescence (PL) spectra for the TlInGaAsN /TlGaAsN TQWs with different Tl incorporation in active region were compared and studied. Reduction in the temperature dependence of the PL peak energy was observed by increased Tl incorporation in the active region.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
