J. Sim, Young-Gu Gang, K. Lim, Joong-Yong Choi, Sang-Keun Kwak, K. Chun, Jei-Hwan Yoo, D.I. Seo, Sooin Cho
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Charge-transferred presensing and efficiently precharged negative word-line schemes for low-voltage DRAMs
A 256 Mb SDRAM is implemented with a 0.12 /spl mu/m technology to verify two circuit schemes suitable for mobile application. A charge transferred presensing is proposed to achieve fast low-voltage sensing and robust operation. With a precharge disabler for productivity, new negative word-line scheme is also proposed to bypass the majority of discharging current to VSS without switching control.
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