T. Rucker, N. Mencinger, V. Murali, K. Regis, R. Shukla, R. Sundahl, B. Siu
{"title":"一种高性能的Si on Si多芯片模块技术","authors":"T. Rucker, N. Mencinger, V. Murali, K. Regis, R. Shukla, R. Sundahl, B. Siu","doi":"10.1109/VLSIT.1992.200650","DOIUrl":null,"url":null,"abstract":"A high-performance microprocessor and cache core based on a silicon-on-silicon multichip module technology is discussed. The technology was designed to have low interconnect parasitics and low cost. A 12-chip module operating at over 75 MHz using this technology was built incorporating an i486 microprocessor, a cache controller, and 256 K of SRAM cache. This represents a 40-50% clock rate improvement over a conventional packaged part approach. The dice were attached to a four-layer metal and polyimide silicon substrate using controlled collapse chip connection (C4) technology. The unit was assembled into a 350 pin ceramic pin grid array (PGA) package. A low-dielectric-constant polyimide and a flip chip die interconnection process minimized RC delay and inductance, and the module can operate at over 160 MHz. The module can dissipate up to 20 W using an array of thermal bumps spaced over the die surface and attached to staircase vias through the substrate.<<ETX>>","PeriodicalId":404756,"journal":{"name":"1992 Symposium on VLSI Technology Digest of Technical Papers","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A high performance Si on Si multichip module technology\",\"authors\":\"T. Rucker, N. Mencinger, V. Murali, K. Regis, R. Shukla, R. Sundahl, B. Siu\",\"doi\":\"10.1109/VLSIT.1992.200650\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high-performance microprocessor and cache core based on a silicon-on-silicon multichip module technology is discussed. The technology was designed to have low interconnect parasitics and low cost. A 12-chip module operating at over 75 MHz using this technology was built incorporating an i486 microprocessor, a cache controller, and 256 K of SRAM cache. This represents a 40-50% clock rate improvement over a conventional packaged part approach. The dice were attached to a four-layer metal and polyimide silicon substrate using controlled collapse chip connection (C4) technology. The unit was assembled into a 350 pin ceramic pin grid array (PGA) package. A low-dielectric-constant polyimide and a flip chip die interconnection process minimized RC delay and inductance, and the module can operate at over 160 MHz. The module can dissipate up to 20 W using an array of thermal bumps spaced over the die surface and attached to staircase vias through the substrate.<<ETX>>\",\"PeriodicalId\":404756,\"journal\":{\"name\":\"1992 Symposium on VLSI Technology Digest of Technical Papers\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 Symposium on VLSI Technology Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1992.200650\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 Symposium on VLSI Technology Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1992.200650","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high performance Si on Si multichip module technology
A high-performance microprocessor and cache core based on a silicon-on-silicon multichip module technology is discussed. The technology was designed to have low interconnect parasitics and low cost. A 12-chip module operating at over 75 MHz using this technology was built incorporating an i486 microprocessor, a cache controller, and 256 K of SRAM cache. This represents a 40-50% clock rate improvement over a conventional packaged part approach. The dice were attached to a four-layer metal and polyimide silicon substrate using controlled collapse chip connection (C4) technology. The unit was assembled into a 350 pin ceramic pin grid array (PGA) package. A low-dielectric-constant polyimide and a flip chip die interconnection process minimized RC delay and inductance, and the module can operate at over 160 MHz. The module can dissipate up to 20 W using an array of thermal bumps spaced over the die surface and attached to staircase vias through the substrate.<>