{"title":"具有更广泛安全操作区域的新IGBT结构(SOA)","authors":"N. Thaper, B. J. Baliga","doi":"10.1109/ISPSD.1994.583697","DOIUrl":null,"url":null,"abstract":"A new IGBT structure incorporating a shallow diverter between adjacent cells is proposed in this paper with the aim of widening the Forward Bias Safe Operating Area (FBSOA) of the IGBT. The latchup limit of the IGBT increased from 700 A/cm/sup 2/ to 1100 A/cm/sup 2/ in case of the n-channel IGBT and from 1200 A/cm/sup 2/ to 2100 A/cm/sup 2/ for the p-channel IGBT. Although there was a no improvement in the dynamic avalanche limit in the case of the p-channel IGBT, it improved significantly for the n-channel IGBT making its FBSOA much wider than that of the conventional IGBT. The incorporation of the diverter was found to result in an increase in the forward voltage drop (at a current density of 200 A/cm/sup 2/) from 1.7 V to 2.3 V and -2.3 V to -3.9 V for the n- and the p-channel IGBT, respectively.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"A new IGBT structure with a wider safe operating area (SOA)\",\"authors\":\"N. Thaper, B. J. Baliga\",\"doi\":\"10.1109/ISPSD.1994.583697\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new IGBT structure incorporating a shallow diverter between adjacent cells is proposed in this paper with the aim of widening the Forward Bias Safe Operating Area (FBSOA) of the IGBT. The latchup limit of the IGBT increased from 700 A/cm/sup 2/ to 1100 A/cm/sup 2/ in case of the n-channel IGBT and from 1200 A/cm/sup 2/ to 2100 A/cm/sup 2/ for the p-channel IGBT. Although there was a no improvement in the dynamic avalanche limit in the case of the p-channel IGBT, it improved significantly for the n-channel IGBT making its FBSOA much wider than that of the conventional IGBT. The incorporation of the diverter was found to result in an increase in the forward voltage drop (at a current density of 200 A/cm/sup 2/) from 1.7 V to 2.3 V and -2.3 V to -3.9 V for the n- and the p-channel IGBT, respectively.\",\"PeriodicalId\":405897,\"journal\":{\"name\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-05-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1994.583697\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583697","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new IGBT structure with a wider safe operating area (SOA)
A new IGBT structure incorporating a shallow diverter between adjacent cells is proposed in this paper with the aim of widening the Forward Bias Safe Operating Area (FBSOA) of the IGBT. The latchup limit of the IGBT increased from 700 A/cm/sup 2/ to 1100 A/cm/sup 2/ in case of the n-channel IGBT and from 1200 A/cm/sup 2/ to 2100 A/cm/sup 2/ for the p-channel IGBT. Although there was a no improvement in the dynamic avalanche limit in the case of the p-channel IGBT, it improved significantly for the n-channel IGBT making its FBSOA much wider than that of the conventional IGBT. The incorporation of the diverter was found to result in an increase in the forward voltage drop (at a current density of 200 A/cm/sup 2/) from 1.7 V to 2.3 V and -2.3 V to -3.9 V for the n- and the p-channel IGBT, respectively.
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