子阵列中MMIC发射模块中GaAs场效应管的实验数据与分析预测的相关性

M. Ibrahim, L. Paradis
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引用次数: 2

摘要

在美国国防部高级研究计划局(DARPA)资助的微波/毫米波单片集成电路(MIMIC)第一阶段开发计划下,开发并运行了基于MMIC技术的发射机模块综合集成有限元模型。该模型确定了FET通道温度对系统和/或芯片级设计变化的敏感性。在一个铜板组件的运行过程中进行了模块热测量,并将结果与预测进行了比较。结果显示出良好的一致性,验证了模型和方法。作者介绍了试验情况,并对实验结果和分析结果进行了比较
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Correlation of experimental data with analytical predictions for GaAs FET in MMIC transmitter module in a subarray
Under the microwave/millimeter-wave monolithic integrated circuit (MIMIC) Phase 1 DARPA sponsored development program, a comprehensive integrated finite element model of a transmitter module which is based on MMIC technology was developed and exercised. This model determined FET channel temperature sensitivity to system and/or chip level design variations. Module thermal measurements were taken during operation of a brassboard assembly, and the results were compared with the predictions. These showed excellent agreement, validating the model and the approach. The authors describe the tests and compare the experimental and analytical results.<>
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