{"title":"取向相关各向异性刻蚀过程中硅二维刻蚀轮廓的模拟","authors":"A. Koide, K. Sato, S. Tanaka","doi":"10.1109/MEMSYS.1991.114799","DOIUrl":null,"url":null,"abstract":"A program for the simulation of two-dimensional anisotropic etching profiles has been developed for application to the design of fabrication processes for micromechanical silicon devices. Using this program, it is possible to predict changes in the cross-sectional shape of a silicon wafer having arbitrary crystallographic orientation and an initial cross-sectional shape including concave and convex edges. The data base covers the etching temperature range from 40 degrees C to 78 degrees C using a 40% KOH aqueous solution as an etchant. The program calculates the etch profiles step by step with a time increment on a desktop computer.<<ETX>>","PeriodicalId":258054,"journal":{"name":"[1991] Proceedings. IEEE Micro Electro Mechanical Systems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching\",\"authors\":\"A. Koide, K. Sato, S. Tanaka\",\"doi\":\"10.1109/MEMSYS.1991.114799\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A program for the simulation of two-dimensional anisotropic etching profiles has been developed for application to the design of fabrication processes for micromechanical silicon devices. Using this program, it is possible to predict changes in the cross-sectional shape of a silicon wafer having arbitrary crystallographic orientation and an initial cross-sectional shape including concave and convex edges. The data base covers the etching temperature range from 40 degrees C to 78 degrees C using a 40% KOH aqueous solution as an etchant. The program calculates the etch profiles step by step with a time increment on a desktop computer.<<ETX>>\",\"PeriodicalId\":258054,\"journal\":{\"name\":\"[1991] Proceedings. IEEE Micro Electro Mechanical Systems\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1991] Proceedings. IEEE Micro Electro Mechanical Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.1991.114799\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] Proceedings. IEEE Micro Electro Mechanical Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.1991.114799","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching
A program for the simulation of two-dimensional anisotropic etching profiles has been developed for application to the design of fabrication processes for micromechanical silicon devices. Using this program, it is possible to predict changes in the cross-sectional shape of a silicon wafer having arbitrary crystallographic orientation and an initial cross-sectional shape including concave and convex edges. The data base covers the etching temperature range from 40 degrees C to 78 degrees C using a 40% KOH aqueous solution as an etchant. The program calculates the etch profiles step by step with a time increment on a desktop computer.<>
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