{"title":"混合模式应力下SiGe HBTs长期老化速率分析与建模","authors":"G. Fischer","doi":"10.1109/BCTM.2016.7738958","DOIUrl":null,"url":null,"abstract":"By means of long-term mixed-mode stress tests of high-speed SiGe HBTs an empirical ageing function for compact models was constructed. This ageing function models saturation of the aging rate as a function of stress time and stress current and is applicable for all relevant mixed-mode stress conditions of this HBT type. Additionally, 1000h stress tests on a high-voltage HBT revealed that not only saturation but even reversal of ageing rate is possible in the long run.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Analysis and modeling of the long-term ageing rate of SiGe HBTs under mixed-mode stress\",\"authors\":\"G. Fischer\",\"doi\":\"10.1109/BCTM.2016.7738958\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By means of long-term mixed-mode stress tests of high-speed SiGe HBTs an empirical ageing function for compact models was constructed. This ageing function models saturation of the aging rate as a function of stress time and stress current and is applicable for all relevant mixed-mode stress conditions of this HBT type. Additionally, 1000h stress tests on a high-voltage HBT revealed that not only saturation but even reversal of ageing rate is possible in the long run.\",\"PeriodicalId\":431327,\"journal\":{\"name\":\"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCTM.2016.7738958\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2016.7738958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis and modeling of the long-term ageing rate of SiGe HBTs under mixed-mode stress
By means of long-term mixed-mode stress tests of high-speed SiGe HBTs an empirical ageing function for compact models was constructed. This ageing function models saturation of the aging rate as a function of stress time and stress current and is applicable for all relevant mixed-mode stress conditions of this HBT type. Additionally, 1000h stress tests on a high-voltage HBT revealed that not only saturation but even reversal of ageing rate is possible in the long run.
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