Analytical Study of Unipolar Junction Transistor as a Novel Dual Material Double Gate MOSFET to Suppress Short-Channel Effect

We propose a new 2D analytical modeling of dual material double gate MOSFET which worked as unipolar junction transistor. A region of $\mathrm{N}+$ on the source terminal and a P-region on the drain and gate terminals are used to construct the structure of unipolar junction as a novel dual material dual gate MOSFET by forming an unipolar junction at the drain side. Here we observed different variation such as surface potential of the structure, distribution of electric field, threshold voltage, DIBL, subthreshold swings. These observations are analytically modeled to solve 2D Poisson's equation by applying parabolic approximation method. A comparative study for conventional double gate MOSFET (CDG), Unipolar junction single material double gate MOSFET (UJ-SMG) and unipolar junction dual material double gate MOSFET (UJ-DMDG) structures has been observed. Results reveal that UJ-DMDG MOSFET structure provides better result to suppress the short channel effect as compared to CDG and UJ-SMG MOSFET.