{"title":"负电容场效应管中RDF和栅极LER诱导的统计变异的相互作用","authors":"T. Dutta, V. Georgiev, A. Asenov","doi":"10.1109/SISPAD.2018.8551747","DOIUrl":null,"url":null,"abstract":"We investigate the impact on statistical variability induced by random dopant fluctuations (RDF) and gate line edge roughness (LER) acting separately and simultaneously in negative capacitance (NC) FETs. In order to simulate the NCFETs, we couple the 3D transistor simulator tool GARAND which is well suited for statistical variability simulations, with the Landau Khalatnikov (L-K) model of the ferroelectric. We also explore the impact of ferroelectric thickness scaling.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Interplay of RDF and Gate LER Induced Statistical Variability in Negative Capacitance FETs\",\"authors\":\"T. Dutta, V. Georgiev, A. Asenov\",\"doi\":\"10.1109/SISPAD.2018.8551747\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigate the impact on statistical variability induced by random dopant fluctuations (RDF) and gate line edge roughness (LER) acting separately and simultaneously in negative capacitance (NC) FETs. In order to simulate the NCFETs, we couple the 3D transistor simulator tool GARAND which is well suited for statistical variability simulations, with the Landau Khalatnikov (L-K) model of the ferroelectric. We also explore the impact of ferroelectric thickness scaling.\",\"PeriodicalId\":170070,\"journal\":{\"name\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2018.8551747\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2018.8551747","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Interplay of RDF and Gate LER Induced Statistical Variability in Negative Capacitance FETs
We investigate the impact on statistical variability induced by random dopant fluctuations (RDF) and gate line edge roughness (LER) acting separately and simultaneously in negative capacitance (NC) FETs. In order to simulate the NCFETs, we couple the 3D transistor simulator tool GARAND which is well suited for statistical variability simulations, with the Landau Khalatnikov (L-K) model of the ferroelectric. We also explore the impact of ferroelectric thickness scaling.
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