{"title":"窄链TPoS谐振器的设计","authors":"Xinyi Li, J. Bao, Feihong Bao","doi":"10.1109/NEMS.2016.7758287","DOIUrl":null,"url":null,"abstract":"A novel kind of RF MEMS lateral extensional thin-film piezoelectric-on-silicon(TPoS) resonator with narrow tethers is proposed. The conventional three-layers supporting beams could be simplified to single material by utilizing different kinds of doping on the bulk structural silicon layer. Within the scope of the fabrication process allowed, the width of tethers could be decreased from 10μm to 2μm, which would greatly reduce the dissipation of the energy from anchors. The finite element analysis simulation results show that the quality factor of the resonator is raised from 13800 to 207300. One feasible way to fabricate this novel resonator is demonstrated. To overcome the disadvantage of power capacity limited by the P-N junction, one associative operating circuit is also introduced.","PeriodicalId":150449,"journal":{"name":"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A design of TPoS resonator with narrow tether\",\"authors\":\"Xinyi Li, J. Bao, Feihong Bao\",\"doi\":\"10.1109/NEMS.2016.7758287\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel kind of RF MEMS lateral extensional thin-film piezoelectric-on-silicon(TPoS) resonator with narrow tethers is proposed. The conventional three-layers supporting beams could be simplified to single material by utilizing different kinds of doping on the bulk structural silicon layer. Within the scope of the fabrication process allowed, the width of tethers could be decreased from 10μm to 2μm, which would greatly reduce the dissipation of the energy from anchors. The finite element analysis simulation results show that the quality factor of the resonator is raised from 13800 to 207300. One feasible way to fabricate this novel resonator is demonstrated. To overcome the disadvantage of power capacity limited by the P-N junction, one associative operating circuit is also introduced.\",\"PeriodicalId\":150449,\"journal\":{\"name\":\"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEMS.2016.7758287\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS.2016.7758287","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel kind of RF MEMS lateral extensional thin-film piezoelectric-on-silicon(TPoS) resonator with narrow tethers is proposed. The conventional three-layers supporting beams could be simplified to single material by utilizing different kinds of doping on the bulk structural silicon layer. Within the scope of the fabrication process allowed, the width of tethers could be decreased from 10μm to 2μm, which would greatly reduce the dissipation of the energy from anchors. The finite element analysis simulation results show that the quality factor of the resonator is raised from 13800 to 207300. One feasible way to fabricate this novel resonator is demonstrated. To overcome the disadvantage of power capacity limited by the P-N junction, one associative operating circuit is also introduced.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
