基于紧凑建模的SiGe HBT终端电流射频噪声提取

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2012-03-01 DOI:10.1109/SIRF.2012.6160162

Ziyan Xu, G. Niu

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引用次数: 3

摘要

本文提出了一种通用的方法来提取SiGe HBT基极和集电极电流中的射频噪声，使用与RFIC设计相同的紧凑模型。用实验数据讨论了实际问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Compact modeling based extraction of RF noise in SiGe HBT terminal currents

This paper presents a general purpose method of extracting RF noise in SiGe HBT base and collector currents using the very same compact models used for RFIC design. Practical issues with experimental data are discussed.

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2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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