{"title":"反转层发射极晶闸管是一种新型的功率器件概念","authors":"F. Udrea, G. Amaratunga","doi":"10.1109/ISPSD.1994.583751","DOIUrl":null,"url":null,"abstract":"A novel MOS-controlled power device termed the Inversion Layer Emitter Thyristor (ILET) is proposed. The principle of operation is based on a new physical concept that expresses the transition of an inversion layer from a majority carrier channel into a minority carrier injector. The device operates in a combined thyristor-IGBT mode having the thyristor emitter formed by an inversion layer. In the on-state the effective channel of the MOS structure is of sub-micrometre order, and does not affect the off-state voltage blocking capability of the device.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"The inversion layer emitter thyristor - a novel power device concept\",\"authors\":\"F. Udrea, G. Amaratunga\",\"doi\":\"10.1109/ISPSD.1994.583751\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel MOS-controlled power device termed the Inversion Layer Emitter Thyristor (ILET) is proposed. The principle of operation is based on a new physical concept that expresses the transition of an inversion layer from a majority carrier channel into a minority carrier injector. The device operates in a combined thyristor-IGBT mode having the thyristor emitter formed by an inversion layer. In the on-state the effective channel of the MOS structure is of sub-micrometre order, and does not affect the off-state voltage blocking capability of the device.\",\"PeriodicalId\":405897,\"journal\":{\"name\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-05-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1994.583751\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583751","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The inversion layer emitter thyristor - a novel power device concept
A novel MOS-controlled power device termed the Inversion Layer Emitter Thyristor (ILET) is proposed. The principle of operation is based on a new physical concept that expresses the transition of an inversion layer from a majority carrier channel into a minority carrier injector. The device operates in a combined thyristor-IGBT mode having the thyristor emitter formed by an inversion layer. In the on-state the effective channel of the MOS structure is of sub-micrometre order, and does not affect the off-state voltage blocking capability of the device.
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