Theodor Hillebrand, Maike Taddiken, Konstantin Tscherkaschin, S. Paul, D. Peters-Drolshagen
{"title":"Vth是dead - long - live阈值电压","authors":"Theodor Hillebrand, Maike Taddiken, Konstantin Tscherkaschin, S. Paul, D. Peters-Drolshagen","doi":"10.1109/IIRW.2016.7904902","DOIUrl":null,"url":null,"abstract":"In this paper a comprehensive analysis of 12 different extraction methods for the threshold voltage Vth is presented. Accounting for the emerging needs of advanced technology nodes the methods are evaluated with TCAD simulations of FDSOI, Bulk and Fin MOSFET devices. The presented analysis provides Figures of Merit in order to choose the most suited extraction method for modeling purposes or determining the impact of degradation. Additionally, a maximum measurement noise can be ascertained ensuring reliable extracted values of Vth for any measurement setup. The recognition capability is analyzed for each method, leading to a measurable minimal ΔVth of a single transistor.","PeriodicalId":436183,"journal":{"name":"2016 IEEE International Integrated Reliability Workshop (IIRW)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Vth is dead - long live the threshold voltage\",\"authors\":\"Theodor Hillebrand, Maike Taddiken, Konstantin Tscherkaschin, S. Paul, D. Peters-Drolshagen\",\"doi\":\"10.1109/IIRW.2016.7904902\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a comprehensive analysis of 12 different extraction methods for the threshold voltage Vth is presented. Accounting for the emerging needs of advanced technology nodes the methods are evaluated with TCAD simulations of FDSOI, Bulk and Fin MOSFET devices. The presented analysis provides Figures of Merit in order to choose the most suited extraction method for modeling purposes or determining the impact of degradation. Additionally, a maximum measurement noise can be ascertained ensuring reliable extracted values of Vth for any measurement setup. The recognition capability is analyzed for each method, leading to a measurable minimal ΔVth of a single transistor.\",\"PeriodicalId\":436183,\"journal\":{\"name\":\"2016 IEEE International Integrated Reliability Workshop (IIRW)\",\"volume\":\"105 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Integrated Reliability Workshop (IIRW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2016.7904902\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Integrated Reliability Workshop (IIRW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2016.7904902","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper a comprehensive analysis of 12 different extraction methods for the threshold voltage Vth is presented. Accounting for the emerging needs of advanced technology nodes the methods are evaluated with TCAD simulations of FDSOI, Bulk and Fin MOSFET devices. The presented analysis provides Figures of Merit in order to choose the most suited extraction method for modeling purposes or determining the impact of degradation. Additionally, a maximum measurement noise can be ascertained ensuring reliable extracted values of Vth for any measurement setup. The recognition capability is analyzed for each method, leading to a measurable minimal ΔVth of a single transistor.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
