{"title":"同一晶圆上AlGaN/GaN finfet与hemt的小信号模型比较与分析","authors":"Liu Wang, Jun Liu, Wenyong Zhou","doi":"10.1109/CICTA.2018.8706092","DOIUrl":null,"url":null,"abstract":"In this letter, we proposed the small-signal models of AlGaN/GaN fin-shaped field-effect transistors (FinFETs) and AlGaN/GaN high electron mobility transistors (HEMTs). The parasitic parameters of device been extracted from small signal model, respectively. The comparisons of parasitic parameters and S-parameters between planer and 3D GaN device also are shown in this work.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The Small-Signal Model Comparison and Analysis between AlGaN/GaN FinFETs and HEMTs on the Same Wafer\",\"authors\":\"Liu Wang, Jun Liu, Wenyong Zhou\",\"doi\":\"10.1109/CICTA.2018.8706092\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this letter, we proposed the small-signal models of AlGaN/GaN fin-shaped field-effect transistors (FinFETs) and AlGaN/GaN high electron mobility transistors (HEMTs). The parasitic parameters of device been extracted from small signal model, respectively. The comparisons of parasitic parameters and S-parameters between planer and 3D GaN device also are shown in this work.\",\"PeriodicalId\":186840,\"journal\":{\"name\":\"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICTA.2018.8706092\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICTA.2018.8706092","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Small-Signal Model Comparison and Analysis between AlGaN/GaN FinFETs and HEMTs on the Same Wafer
In this letter, we proposed the small-signal models of AlGaN/GaN fin-shaped field-effect transistors (FinFETs) and AlGaN/GaN high electron mobility transistors (HEMTs). The parasitic parameters of device been extracted from small signal model, respectively. The comparisons of parasitic parameters and S-parameters between planer and 3D GaN device also are shown in this work.
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