{"title":"硅有足够的空间","authors":"Y. Park","doi":"10.1109/SMELEC.2014.6920775","DOIUrl":null,"url":null,"abstract":"Summary form only given. As the silicon technology is scaled down to sub. 10nm and most advanced chips are fabricated mostly in the industry, silicon related researches draw less attention from young researchers. Rather, academia researches on electronics are shifted to exploring new materials such as graphene, 2D metal oxide and carbon nanotube. However, there is plenty of room at the Silicon. The `plenty of room' implies more than the `more than Moore' paradigm, where the silicon chip technology is expanded to applications such as photonics, bio sensing, MEMS, etc. Rather, the `plenty of room' paradigm implies that the operational principles of silicon devices are applied (rather than simple integration) to expanding the capability of the `more than Moore' and even `beyond the Moore' paradigm. As examples of the new paradigm, we present three examples developed at Seoul National University. Firstly, the electron tunneling phenomenon from silicon to gate through gate insulator is used as means of injecting electrons to water solution(water solution is gate in this case). In this way, well controlled electrons in terms of numbers and energies can be supplied to water to understand and control the surface chemistry at the water-solid interface [1]. Secondly, well known electronic feedback taken place in the bipolar transistor under the BVceo condition is applied to the UVLED based spectroscopy. With an electron detouring from the PD(Photo detector diode) to the photo generation at the PD junction by way of LED, the `bipolar like snap back' in the current voltage characteristics of the PD can be obtained by the impact ionization feedback. As the BVceo is critically sensitive to the transistor α, the PD snap back is sensitive to the detouring path, where the light from LED is absorbed by the molecules before arriving at the PD junction. Using the system, orders of magnitude enhancement in the sensitivity has been obtained for the detection of the (contaminating) molecules in the water. In the third example, the pulse technique is applied between the electrical channel and water solution to alleviate the signal degradation from the bio molecules due to the charge screening effect, which is similar to the technique used in the CCD(Charge Coupled Device) to transfer the electrons from the optical excitation[2]. We are applying the pulse technique to sensing the DNA as the biomarker of the Denge virus in collaboration with the IMEN(Institute of Microengineering and Nanoelectronics of Malaysia. With the experiences, we propose that the `plenty of room at the silicon' paradigm to maximally utilize the benefit of the silicon technology.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"There is plenty of room at the silicon\",\"authors\":\"Y. Park\",\"doi\":\"10.1109/SMELEC.2014.6920775\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. As the silicon technology is scaled down to sub. 10nm and most advanced chips are fabricated mostly in the industry, silicon related researches draw less attention from young researchers. Rather, academia researches on electronics are shifted to exploring new materials such as graphene, 2D metal oxide and carbon nanotube. However, there is plenty of room at the Silicon. The `plenty of room' implies more than the `more than Moore' paradigm, where the silicon chip technology is expanded to applications such as photonics, bio sensing, MEMS, etc. Rather, the `plenty of room' paradigm implies that the operational principles of silicon devices are applied (rather than simple integration) to expanding the capability of the `more than Moore' and even `beyond the Moore' paradigm. As examples of the new paradigm, we present three examples developed at Seoul National University. Firstly, the electron tunneling phenomenon from silicon to gate through gate insulator is used as means of injecting electrons to water solution(water solution is gate in this case). In this way, well controlled electrons in terms of numbers and energies can be supplied to water to understand and control the surface chemistry at the water-solid interface [1]. Secondly, well known electronic feedback taken place in the bipolar transistor under the BVceo condition is applied to the UVLED based spectroscopy. With an electron detouring from the PD(Photo detector diode) to the photo generation at the PD junction by way of LED, the `bipolar like snap back' in the current voltage characteristics of the PD can be obtained by the impact ionization feedback. As the BVceo is critically sensitive to the transistor α, the PD snap back is sensitive to the detouring path, where the light from LED is absorbed by the molecules before arriving at the PD junction. Using the system, orders of magnitude enhancement in the sensitivity has been obtained for the detection of the (contaminating) molecules in the water. In the third example, the pulse technique is applied between the electrical channel and water solution to alleviate the signal degradation from the bio molecules due to the charge screening effect, which is similar to the technique used in the CCD(Charge Coupled Device) to transfer the electrons from the optical excitation[2]. We are applying the pulse technique to sensing the DNA as the biomarker of the Denge virus in collaboration with the IMEN(Institute of Microengineering and Nanoelectronics of Malaysia. With the experiences, we propose that the `plenty of room at the silicon' paradigm to maximally utilize the benefit of the silicon technology.\",\"PeriodicalId\":268203,\"journal\":{\"name\":\"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2014.6920775\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2014.6920775","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

只提供摘要形式。由于硅技术的规模缩小到10纳米以下,而且最先进的芯片大多是在工业中制造的,因此与硅相关的研究很少受到年轻研究人员的关注。相反,学术界对电子学的研究转向了石墨烯、二维金属氧化物和碳纳米管等新材料的探索。然而,在硅谷有足够的空间。“足够的空间”意味着比“超过摩尔”范式更多,其中硅芯片技术扩展到光子学,生物传感,MEMS等应用。相反,“足够的空间”范式意味着硅器件的操作原理被应用(而不是简单的集成)来扩展“超过摩尔”甚至“超越摩尔”范式的能力。作为新范式的例子,我们提出了首尔国立大学开发的三个例子。首先,利用从硅到栅极通过栅极绝缘体的电子隧穿现象,将电子注入到水溶液中(在这种情况下,水溶液是栅极)。这样,就可以向水中提供数量和能量可控的电子,从而了解和控制水-固界面的表面化学[1]。其次,将双极晶体管在BVceo条件下发生的众所周知的电子反馈应用于UVLED光谱。当电子通过LED从PD(光电探测器二极管)绕行到PD结处产生光时,通过冲击电离反馈可以获得PD电流电压特性中的“双极样回跳”。由于BVceo对晶体管α非常敏感,PD回跳对迂回路径非常敏感,在迂回路径中,来自LED的光在到达PD结之前被分子吸收。使用该系统,对水中(污染)分子的检测灵敏度提高了几个数量级。在第三个例子中,在电通道和水溶液之间应用脉冲技术,以减轻由于电荷筛选效应而导致的生物分子信号退化,这类似于CCD(charge Coupled Device)从光激发中转移电子的技术[2]。我们正在与马来西亚微工程和纳米电子学研究所合作,将脉冲技术应用于检测DNA作为登革病毒的生物标志物。有了这些经验,我们建议“硅有足够的空间”范式来最大限度地利用硅技术的优势。
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There is plenty of room at the silicon
Summary form only given. As the silicon technology is scaled down to sub. 10nm and most advanced chips are fabricated mostly in the industry, silicon related researches draw less attention from young researchers. Rather, academia researches on electronics are shifted to exploring new materials such as graphene, 2D metal oxide and carbon nanotube. However, there is plenty of room at the Silicon. The `plenty of room' implies more than the `more than Moore' paradigm, where the silicon chip technology is expanded to applications such as photonics, bio sensing, MEMS, etc. Rather, the `plenty of room' paradigm implies that the operational principles of silicon devices are applied (rather than simple integration) to expanding the capability of the `more than Moore' and even `beyond the Moore' paradigm. As examples of the new paradigm, we present three examples developed at Seoul National University. Firstly, the electron tunneling phenomenon from silicon to gate through gate insulator is used as means of injecting electrons to water solution(water solution is gate in this case). In this way, well controlled electrons in terms of numbers and energies can be supplied to water to understand and control the surface chemistry at the water-solid interface [1]. Secondly, well known electronic feedback taken place in the bipolar transistor under the BVceo condition is applied to the UVLED based spectroscopy. With an electron detouring from the PD(Photo detector diode) to the photo generation at the PD junction by way of LED, the `bipolar like snap back' in the current voltage characteristics of the PD can be obtained by the impact ionization feedback. As the BVceo is critically sensitive to the transistor α, the PD snap back is sensitive to the detouring path, where the light from LED is absorbed by the molecules before arriving at the PD junction. Using the system, orders of magnitude enhancement in the sensitivity has been obtained for the detection of the (contaminating) molecules in the water. In the third example, the pulse technique is applied between the electrical channel and water solution to alleviate the signal degradation from the bio molecules due to the charge screening effect, which is similar to the technique used in the CCD(Charge Coupled Device) to transfer the electrons from the optical excitation[2]. We are applying the pulse technique to sensing the DNA as the biomarker of the Denge virus in collaboration with the IMEN(Institute of Microengineering and Nanoelectronics of Malaysia. With the experiences, we propose that the `plenty of room at the silicon' paradigm to maximally utilize the benefit of the silicon technology.
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