{"title":"N/sub 2/ o退火SiO/sub 2//SiC体系的界面性能","authors":"S. Chakraborty, P. Lai, C. Chan, Y. Cheng","doi":"10.1109/HKEDM.2000.904227","DOIUrl":null,"url":null,"abstract":"The electrical properties of dry-oxidized, N/sub 2/O-annealed n-type 6H-SiC metal-oxide-semiconductor (MOS) capacitors are investigated at room temperature. As compared to conventional dry-oxidized device, although the N/sub 2/O-annealed device has higher oxide-charge density, it shows smaller increase in interface-state density under high-field stress. On the other hand, the stress measurements indicate that dry-oxidized device has fewer pre-existing acceptor-type interface states and oxide traps. In summary, N/sub 2/O nitridation improves the hardness of SiO/sub 2//n-type SiC interface and the oxide quality under high-field stress.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Interface properties of N/sub 2/O-annealed SiO/sub 2//SiC system\",\"authors\":\"S. Chakraborty, P. Lai, C. Chan, Y. Cheng\",\"doi\":\"10.1109/HKEDM.2000.904227\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical properties of dry-oxidized, N/sub 2/O-annealed n-type 6H-SiC metal-oxide-semiconductor (MOS) capacitors are investigated at room temperature. As compared to conventional dry-oxidized device, although the N/sub 2/O-annealed device has higher oxide-charge density, it shows smaller increase in interface-state density under high-field stress. On the other hand, the stress measurements indicate that dry-oxidized device has fewer pre-existing acceptor-type interface states and oxide traps. In summary, N/sub 2/O nitridation improves the hardness of SiO/sub 2//n-type SiC interface and the oxide quality under high-field stress.\",\"PeriodicalId\":178667,\"journal\":{\"name\":\"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.2000.904227\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.2000.904227","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Interface properties of N/sub 2/O-annealed SiO/sub 2//SiC system
The electrical properties of dry-oxidized, N/sub 2/O-annealed n-type 6H-SiC metal-oxide-semiconductor (MOS) capacitors are investigated at room temperature. As compared to conventional dry-oxidized device, although the N/sub 2/O-annealed device has higher oxide-charge density, it shows smaller increase in interface-state density under high-field stress. On the other hand, the stress measurements indicate that dry-oxidized device has fewer pre-existing acceptor-type interface states and oxide traps. In summary, N/sub 2/O nitridation improves the hardness of SiO/sub 2//n-type SiC interface and the oxide quality under high-field stress.
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