MOCVD生长在Si和蓝宝石上ZnO薄膜的x射线吸收精细结构

Jieping Xin, C. Chang, Chih-han Hsueh, Jyhfu Lee, Jin‐Ming Chen, Hao-Hsiung Lin, N. Lu, I. Ferguson, Yongjing Guan, L. Wan, Qingyi Yang, Z. Feng
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引用次数: 0

摘要

采用x射线吸收精细结构研究了金属有机化学气相沉积法在蓝宝石和硅衬底上生长的ZnO薄膜的电子结构和键长。结果表明,不同的衬底会导致Zn-O键长收缩,而Zn- K-edge的扩展x射线吸收精细结构(EXAFS)则会导致Zn-O键长收缩。
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X-ray absorption fine structure of ZnO thin film on Si and sapphire grown by MOCVD
X-ray absorption fine structure has been used to study the electronic structure, and bond length of ZnO thin films grown on sapphire and Si substrates by metalorganic chemical vapor deposition. X-ray absorption near edge structure (XANES) of O and Zn K-edge were shown, and a detailed analysis of extended x-ray absorption fine structure (EXAFS) of Zn K-edge indicates that difference substrates results in the contraction of Zn-O bond length.
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