Jieping Xin, C. Chang, Chih-han Hsueh, Jyhfu Lee, Jin‐Ming Chen, Hao-Hsiung Lin, N. Lu, I. Ferguson, Yongjing Guan, L. Wan, Qingyi Yang, Z. Feng
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X-ray absorption fine structure of ZnO thin film on Si and sapphire grown by MOCVD
X-ray absorption fine structure has been used to study the electronic structure, and bond length of ZnO thin films grown on sapphire and Si substrates by metalorganic chemical vapor deposition. X-ray absorption near edge structure (XANES) of O and Zn K-edge were shown, and a detailed analysis of extended x-ray absorption fine structure (EXAFS) of Zn K-edge indicates that difference substrates results in the contraction of Zn-O bond length.
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