{"title":"超低噪声InGaP门控PHEMT","authors":"H. Huang, Y. Wang","doi":"10.1109/GAAS.2001.964386","DOIUrl":null,"url":null,"abstract":"Very high performance InGaP/InGaAs/GaAs PHEMT is demonstrated. The fabricated InGaP gated PHEMT device with 0.25/spl times/160 /spl mu/m/sup 2/ of gate dimension shows a 304 mA/mm of saturation drain current at V/sub Gs/=0V, V/sub DS/=2 V and a 320 mS/mm of extrinsic transconductance. Noise figure at 12 GHz is measured to be 0.46 dB with a 13 dB associated gain. With such a high gain and low noise, the drain-to-gate breakdown can be as high as 10 V. Standard deviation in the threshold voltage of 22 mV across a 4-inch wafer can be achieved using a highly selective wet recess etching process.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Super low noise InGaP gated PHEMT\",\"authors\":\"H. Huang, Y. Wang\",\"doi\":\"10.1109/GAAS.2001.964386\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Very high performance InGaP/InGaAs/GaAs PHEMT is demonstrated. The fabricated InGaP gated PHEMT device with 0.25/spl times/160 /spl mu/m/sup 2/ of gate dimension shows a 304 mA/mm of saturation drain current at V/sub Gs/=0V, V/sub DS/=2 V and a 320 mS/mm of extrinsic transconductance. Noise figure at 12 GHz is measured to be 0.46 dB with a 13 dB associated gain. With such a high gain and low noise, the drain-to-gate breakdown can be as high as 10 V. Standard deviation in the threshold voltage of 22 mV across a 4-inch wafer can be achieved using a highly selective wet recess etching process.\",\"PeriodicalId\":269944,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2001.964386\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964386","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Very high performance InGaP/InGaAs/GaAs PHEMT is demonstrated. The fabricated InGaP gated PHEMT device with 0.25/spl times/160 /spl mu/m/sup 2/ of gate dimension shows a 304 mA/mm of saturation drain current at V/sub Gs/=0V, V/sub DS/=2 V and a 320 mS/mm of extrinsic transconductance. Noise figure at 12 GHz is measured to be 0.46 dB with a 13 dB associated gain. With such a high gain and low noise, the drain-to-gate breakdown can be as high as 10 V. Standard deviation in the threshold voltage of 22 mV across a 4-inch wafer can be achieved using a highly selective wet recess etching process.
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