{"title":"在制品的数量。开源标准电池表征工艺流程为45 nm (FreePDK45), 0.18µm, 0.25µm, 0.35µm和0.5µm","authors":"R. Thapa, Samira Ataei, J. Stine","doi":"10.1109/MSE.2017.7945072","DOIUrl":null,"url":null,"abstract":"This paper describes the design flow of the standard cell characterization on five different technologies and integration of its results with other VLSI tools processes that can be duplicated and implemented for the research and education in the academia. In this proposed work, one design flow is on non-fabricable technology of open-source false-technology FreePDK45 of 45 nm CMOS technology [1]. The other design flows are in the fabricable technology in 0.18 µm, 0.25 µm, 0.35 µm and 0.5 µm. The design flow are automated to simplify the students with intricacy of the tools. This design flows in this work are automated for the tool, Virtuoso Liberate from Cadence Design Systems and students can easily adopt it as part of the VLSI design class curriculum. This characterization flow precisely models the electrical characteristics of the cell that has been subjected to different input variables as explained below. The characterized models are of high demand in other design tools used in between RTL to GDSII process flow.","PeriodicalId":339888,"journal":{"name":"2017 IEEE International Conference on Microelectronic Systems Education (MSE)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"WIP. Open-source standard cell characterization process flow on 45 nm (FreePDK45), 0.18 µm, 0.25 µm, 0.35 µm and 0.5 µm\",\"authors\":\"R. Thapa, Samira Ataei, J. Stine\",\"doi\":\"10.1109/MSE.2017.7945072\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the design flow of the standard cell characterization on five different technologies and integration of its results with other VLSI tools processes that can be duplicated and implemented for the research and education in the academia. In this proposed work, one design flow is on non-fabricable technology of open-source false-technology FreePDK45 of 45 nm CMOS technology [1]. The other design flows are in the fabricable technology in 0.18 µm, 0.25 µm, 0.35 µm and 0.5 µm. The design flow are automated to simplify the students with intricacy of the tools. This design flows in this work are automated for the tool, Virtuoso Liberate from Cadence Design Systems and students can easily adopt it as part of the VLSI design class curriculum. This characterization flow precisely models the electrical characteristics of the cell that has been subjected to different input variables as explained below. The characterized models are of high demand in other design tools used in between RTL to GDSII process flow.\",\"PeriodicalId\":339888,\"journal\":{\"name\":\"2017 IEEE International Conference on Microelectronic Systems Education (MSE)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE International Conference on Microelectronic Systems Education (MSE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MSE.2017.7945072\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Conference on Microelectronic Systems Education (MSE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MSE.2017.7945072","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
WIP. Open-source standard cell characterization process flow on 45 nm (FreePDK45), 0.18 µm, 0.25 µm, 0.35 µm and 0.5 µm
This paper describes the design flow of the standard cell characterization on five different technologies and integration of its results with other VLSI tools processes that can be duplicated and implemented for the research and education in the academia. In this proposed work, one design flow is on non-fabricable technology of open-source false-technology FreePDK45 of 45 nm CMOS technology [1]. The other design flows are in the fabricable technology in 0.18 µm, 0.25 µm, 0.35 µm and 0.5 µm. The design flow are automated to simplify the students with intricacy of the tools. This design flows in this work are automated for the tool, Virtuoso Liberate from Cadence Design Systems and students can easily adopt it as part of the VLSI design class curriculum. This characterization flow precisely models the electrical characteristics of the cell that has been subjected to different input variables as explained below. The characterized models are of high demand in other design tools used in between RTL to GDSII process flow.