{"title":"带占空比积分器的一阶连续时间噪声整形SAR ADC","authors":"Hanyue Li, Yuting Shen, E. Cantatore, P. Harpe","doi":"10.1109/vlsitechnologyandcir46769.2022.9830373","DOIUrl":null,"url":null,"abstract":"This paper presents the first continuous-time (CT) noise-shaping SAR (NS-SAR) ADC. Different from the prior discrete-time (DT) NS-SAR ADCs in literature, this ADC utilizes a CT Gm-C integrator to realize an inherent anti-aliasing function. To cope with the timing conflict between the DT-operated SAR ADC and the CT integrator, the sampling switch of the SAR ADC is removed, and the integrator is duty-cycled. Fabricated in 65 nm CMOS, the prototype achieves 77 dB peak SNDR within 62.5 kHz bandwidth while consuming 13.5 μW, and it provides 15 dB anti-aliasing in the alias band.","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A First-Order Continuous-Time Noise-Shaping SAR ADC with Duty-Cycled Integrator\",\"authors\":\"Hanyue Li, Yuting Shen, E. Cantatore, P. Harpe\",\"doi\":\"10.1109/vlsitechnologyandcir46769.2022.9830373\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the first continuous-time (CT) noise-shaping SAR (NS-SAR) ADC. Different from the prior discrete-time (DT) NS-SAR ADCs in literature, this ADC utilizes a CT Gm-C integrator to realize an inherent anti-aliasing function. To cope with the timing conflict between the DT-operated SAR ADC and the CT integrator, the sampling switch of the SAR ADC is removed, and the integrator is duty-cycled. Fabricated in 65 nm CMOS, the prototype achieves 77 dB peak SNDR within 62.5 kHz bandwidth while consuming 13.5 μW, and it provides 15 dB anti-aliasing in the alias band.\",\"PeriodicalId\":332454,\"journal\":{\"name\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830373\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830373","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A First-Order Continuous-Time Noise-Shaping SAR ADC with Duty-Cycled Integrator
This paper presents the first continuous-time (CT) noise-shaping SAR (NS-SAR) ADC. Different from the prior discrete-time (DT) NS-SAR ADCs in literature, this ADC utilizes a CT Gm-C integrator to realize an inherent anti-aliasing function. To cope with the timing conflict between the DT-operated SAR ADC and the CT integrator, the sampling switch of the SAR ADC is removed, and the integrator is duty-cycled. Fabricated in 65 nm CMOS, the prototype achieves 77 dB peak SNDR within 62.5 kHz bandwidth while consuming 13.5 μW, and it provides 15 dB anti-aliasing in the alias band.