具有采样保持器的低噪声放大器,用于高密度刺激和神经信号的记录

Urs A. Muller, S. Tanner, P. Farine
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引用次数: 1

摘要

本文设计了一种用于32×32像素微电极阵列(MEA)的低噪声放大器(LNA)。在66kHz带宽下,增益和噪声分别为50 dB和10μVrms。LNA功耗小于85μW。集成的偏置补偿电路使系统对失配和培养基偏置电压变化的敏感性降低。采样保持(S&H)缓冲器在本地存储放大的输入信号,从而实现电子快门功能。这允许同时获取所有像素。片上逻辑允许在任何时候单独选择每一个像素。因此,可以定义任何大小的兴趣区域(roi)。因此,可以在高采样率下观察到整个细胞培养或亚区域。此外,每个像素都配备有刺激电路。围绕可编程SRAM单元,它可以在MEA上创建复杂的刺激模式。整个电路采用180nm、3.3V CMOS技术,覆盖面积为60×60 μm2。
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Low-noise amplifier with sample & hold for high-density stimulation and recording of neural signals
In this paper, the design of a low-noise amplifier (LNA) for a 32×32 pixel microelectrode array (MEA) is presented. Its gain and noise amount to 50 dB and 10μVrms, respectively, at a bandwidth of 66kHz. The LNA consumes less than 85μW. The integrated offset compensation circuit makes the system less sensitive to mismatch and variations in the culture medium biasing voltage. A sample& hold (S&H) buffer stores the amplified input signals locally, thereby realising an electronic shutter function. This allows for simultaneous acquisition of all pixels. The on-chip logic permits individual selection of every single pixel at any time. As a result, regions of interest (ROIs) of any size can be defined. Accordingly, the entire cell culture or subregions can be observed at a high sampling rate. Moreover, each pixel is equipped with a stimulation circuitry. Centered around a programmable SRAM cell, it offers the creation of complex stimulation patterns on the MEA. The entire circuit has been layouted in 180 nm, 3.3V CMOS technology and covers an area of 60×60 μm2.
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