A. Tessmann, A. Leuther, C. Schwoerer, H. Massler, S. Kudszus, W. Reinert, M. Schlechtweg
{"title":"采用0.07 /spl μ /m变质级联hemt的共面94 GHz低噪声MMIC放大器","authors":"A. Tessmann, A. Leuther, C. Schwoerer, H. Massler, S. Kudszus, W. Reinert, M. Schlechtweg","doi":"10.1109/MWSYM.2003.1210439","DOIUrl":null,"url":null,"abstract":"A 94 GHz low-noise amplifier MMIC (LNA) has been developed, based on a coplanar technology utilizing 0.07 /spl mu/m depletion type metamorphic HEMTs (MHEMTs). The realized single stage cascode LNA achieved a small-signal gain of more than 12 dB and an average noise figure of 23 dB over the bandwidth from 80 to 100 GHz. With an indium content of 80% in the channel, a 2/spl times/30 /spl mu/m MHEMT device has shown a transit frequency (f/sub t/) of 290 GHz, an extrinsic transconductance of 1450 mS/mm and a maximum stable gain (MSG) of 11 dB at 94 GHz. Using two HEMTs connected in cascode configuration, the MSG could be increased to 22 dB. To stabilize the cascode device and to increase the bandwidth of the amplifier circuit, a resistive feedback was integrated into the HEMT in common-gate configuration. Coplanar topology in combination with cascode transistors resulted in a chip-size of only 1/spl times/1 mm/sup 2/.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"A coplanar 94 GHz low-noise amplifier MMIC using 0.07 /spl mu/m metamorphic cascode HEMTs\",\"authors\":\"A. Tessmann, A. Leuther, C. Schwoerer, H. Massler, S. Kudszus, W. Reinert, M. Schlechtweg\",\"doi\":\"10.1109/MWSYM.2003.1210439\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 94 GHz low-noise amplifier MMIC (LNA) has been developed, based on a coplanar technology utilizing 0.07 /spl mu/m depletion type metamorphic HEMTs (MHEMTs). The realized single stage cascode LNA achieved a small-signal gain of more than 12 dB and an average noise figure of 23 dB over the bandwidth from 80 to 100 GHz. With an indium content of 80% in the channel, a 2/spl times/30 /spl mu/m MHEMT device has shown a transit frequency (f/sub t/) of 290 GHz, an extrinsic transconductance of 1450 mS/mm and a maximum stable gain (MSG) of 11 dB at 94 GHz. Using two HEMTs connected in cascode configuration, the MSG could be increased to 22 dB. To stabilize the cascode device and to increase the bandwidth of the amplifier circuit, a resistive feedback was integrated into the HEMT in common-gate configuration. Coplanar topology in combination with cascode transistors resulted in a chip-size of only 1/spl times/1 mm/sup 2/.\",\"PeriodicalId\":252251,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2003.1210439\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1210439","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A coplanar 94 GHz low-noise amplifier MMIC using 0.07 /spl mu/m metamorphic cascode HEMTs
A 94 GHz low-noise amplifier MMIC (LNA) has been developed, based on a coplanar technology utilizing 0.07 /spl mu/m depletion type metamorphic HEMTs (MHEMTs). The realized single stage cascode LNA achieved a small-signal gain of more than 12 dB and an average noise figure of 23 dB over the bandwidth from 80 to 100 GHz. With an indium content of 80% in the channel, a 2/spl times/30 /spl mu/m MHEMT device has shown a transit frequency (f/sub t/) of 290 GHz, an extrinsic transconductance of 1450 mS/mm and a maximum stable gain (MSG) of 11 dB at 94 GHz. Using two HEMTs connected in cascode configuration, the MSG could be increased to 22 dB. To stabilize the cascode device and to increase the bandwidth of the amplifier circuit, a resistive feedback was integrated into the HEMT in common-gate configuration. Coplanar topology in combination with cascode transistors resulted in a chip-size of only 1/spl times/1 mm/sup 2/.