采用0.07 /spl μ /m变质级联hemt的共面94 GHz低噪声MMIC放大器

A. Tessmann, A. Leuther, C. Schwoerer, H. Massler, S. Kudszus, W. Reinert, M. Schlechtweg
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引用次数: 26

摘要

基于共面技术,利用0.07 /spl mu/m损耗型变质HEMTs (MHEMTs)开发了一种94 GHz低噪声放大器MMIC (LNA)。所实现的单级级联码LNA在80 ~ 100 GHz的带宽范围内实现了12 dB以上的小信号增益和23 dB的平均噪声系数。当通道中铟含量为80%时,2/spl倍/30 /spl mu/m的MHEMT器件显示出290 GHz的传输频率(f/sub / t/), 1450 mS/mm的外在跨导和11db的最大稳定增益(MSG)。使用级联配置连接的两个hemt, MSG可以增加到22 dB。为了稳定级联码器件并增加放大电路的带宽,在HEMT中集成了一个电阻反馈的共门配置。共面拓扑结构与级联晶体管相结合,导致芯片尺寸仅为1/spl倍/1 mm/sup / 2。
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A coplanar 94 GHz low-noise amplifier MMIC using 0.07 /spl mu/m metamorphic cascode HEMTs
A 94 GHz low-noise amplifier MMIC (LNA) has been developed, based on a coplanar technology utilizing 0.07 /spl mu/m depletion type metamorphic HEMTs (MHEMTs). The realized single stage cascode LNA achieved a small-signal gain of more than 12 dB and an average noise figure of 23 dB over the bandwidth from 80 to 100 GHz. With an indium content of 80% in the channel, a 2/spl times/30 /spl mu/m MHEMT device has shown a transit frequency (f/sub t/) of 290 GHz, an extrinsic transconductance of 1450 mS/mm and a maximum stable gain (MSG) of 11 dB at 94 GHz. Using two HEMTs connected in cascode configuration, the MSG could be increased to 22 dB. To stabilize the cascode device and to increase the bandwidth of the amplifier circuit, a resistive feedback was integrated into the HEMT in common-gate configuration. Coplanar topology in combination with cascode transistors resulted in a chip-size of only 1/spl times/1 mm/sup 2/.
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