浮式金属-绝缘体-金属电容器的等离子体损伤

J. Ackaert, Zhichun Wang, E. De Backer, P. Coppens
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引用次数: 6

摘要

本文报道了金属-绝缘体-金属电容器(mimc)的充电诱发损伤(CID)。CID不一定会导致直接的产量损失,但也可能引起潜在的损坏,从而导致可靠性损失。损坏是由电容器的两个极板之间电压电位差的累积引起的。在这个电压电位造成的损伤和连接到MIMC板上的暴露天线的面积之比之间发现了一个简单的对数关系。该功能允许在具有长互连的mimc中预测损坏。
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Plasma damage in floating metal-insulator-metal capacitors
In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to reliability losses. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage potential and the ratio of the area of the exposed antennas connected to the plates of the MIMC. This function allows anticipation of damage in MIMCs with long interconnects.
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