论子带间跃迁激光器的可行性

A. Afzali-Kushaa, G. Haddad, T. Norris
{"title":"论子带间跃迁激光器的可行性","authors":"A. Afzali-Kushaa, G. Haddad, T. Norris","doi":"10.1109/CORNEL.1993.303083","DOIUrl":null,"url":null,"abstract":"The feasibility and potential of laser sources based on intersubband transitions in quantum wells and strained layers will be presented. The basic schemes and proposed structures for both electrically and optically pumped devices are discussed. Both conduction band and valence band quantum wells as well as strained layers may be used as the active layer of these lasers. These sources can be either optically or electrically pumped with each having its own advantages. Various material systems which are appropriate for these applications will be described.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"On the feasibility of intersubband transition lasers\",\"authors\":\"A. Afzali-Kushaa, G. Haddad, T. Norris\",\"doi\":\"10.1109/CORNEL.1993.303083\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The feasibility and potential of laser sources based on intersubband transitions in quantum wells and strained layers will be presented. The basic schemes and proposed structures for both electrically and optically pumped devices are discussed. Both conduction band and valence band quantum wells as well as strained layers may be used as the active layer of these lasers. These sources can be either optically or electrically pumped with each having its own advantages. Various material systems which are appropriate for these applications will be described.<<ETX>>\",\"PeriodicalId\":129440,\"journal\":{\"name\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1993.303083\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303083","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

介绍了基于量子阱和应变层的子带间跃迁的激光源的可行性和潜力。讨论了电泵浦和光泵浦器件的基本方案和结构。导带和价带量子阱以及应变层都可以作为这些激光器的有源层。这些源既可以是光学泵浦,也可以是电泵浦,各有各的优点。将描述适用于这些应用的各种材料系统。
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On the feasibility of intersubband transition lasers
The feasibility and potential of laser sources based on intersubband transitions in quantum wells and strained layers will be presented. The basic schemes and proposed structures for both electrically and optically pumped devices are discussed. Both conduction band and valence band quantum wells as well as strained layers may be used as the active layer of these lasers. These sources can be either optically or electrically pumped with each having its own advantages. Various material systems which are appropriate for these applications will be described.<>
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