{"title":"在电致发光启动电流范围内测量LED P-I特性斜率的安装","authors":"I. Frolov, O. Radaev, V. Sergeev","doi":"10.1109/APEDE48864.2020.9255413","DOIUrl":null,"url":null,"abstract":"It is known that defects of InGaN/GaN LED heterostructure lead to a decrease of the slope of the light output power-current (P-I) characteristic of the LED. This is especially pronounced in microcurrent mode. An automated installation has been developed for measuring of the slope of the P-I characteristic of the LED in the current range of 5 µA … 3 mA. An example of a sample of green commercial LEDs shows the presence of a high correlation between the slope of the P-I characteristic and the defects density in the heterostructure of the LED. The measuring installation can be used in the system of quality control of LEDs.","PeriodicalId":277559,"journal":{"name":"2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Installation for Measuring of the Slope of the P-I Characteristic of the LED in the Range of the Electroluminescence Start Currents\",\"authors\":\"I. Frolov, O. Radaev, V. Sergeev\",\"doi\":\"10.1109/APEDE48864.2020.9255413\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is known that defects of InGaN/GaN LED heterostructure lead to a decrease of the slope of the light output power-current (P-I) characteristic of the LED. This is especially pronounced in microcurrent mode. An automated installation has been developed for measuring of the slope of the P-I characteristic of the LED in the current range of 5 µA … 3 mA. An example of a sample of green commercial LEDs shows the presence of a high correlation between the slope of the P-I characteristic and the defects density in the heterostructure of the LED. The measuring installation can be used in the system of quality control of LEDs.\",\"PeriodicalId\":277559,\"journal\":{\"name\":\"2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE)\",\"volume\":\"93 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEDE48864.2020.9255413\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEDE48864.2020.9255413","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Installation for Measuring of the Slope of the P-I Characteristic of the LED in the Range of the Electroluminescence Start Currents
It is known that defects of InGaN/GaN LED heterostructure lead to a decrease of the slope of the light output power-current (P-I) characteristic of the LED. This is especially pronounced in microcurrent mode. An automated installation has been developed for measuring of the slope of the P-I characteristic of the LED in the current range of 5 µA … 3 mA. An example of a sample of green commercial LEDs shows the presence of a high correlation between the slope of the P-I characteristic and the defects density in the heterostructure of the LED. The measuring installation can be used in the system of quality control of LEDs.
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