高单模功率，单片偏振控制的氧化受限光栅浮雕VCSELs

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI:10.1109/ISLC.2004.1382780

J. Ostermann, P. Debernardi, C. Jalics, M. Feneberg, A. Kroner, M.C. Reidi, M. Golling, R. Michalzik

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引用次数: 4

摘要

我们提出了具有高达6 mW单模输出功率的偏振稳定InGaAs/GaAs vcsel。它们沿[011]、[0~11][010]或[001]晶轴的偏振方向由介电光栅浮雕来定义和控制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High single-mode power, monolithic polarization-controlled oxide-confined grating relief VCSELs

We present polarization-stable InGaAs/GaAs VCSELs with up to 6 mW single-mode output power. The orientation of their polarization along the [011],[0~11] [010] or [001] crystal axis is defined and controlled by a dielectric grating relief.

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2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.

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