{"title":"采用不同工艺制备栅极介质的n-MOSFET的电性能和可靠性","authors":"Zeng Xu, P. Lai, W. Ng","doi":"10.1109/HKEDM.1994.395138","DOIUrl":null,"url":null,"abstract":"In this paper, electrical characteristics and reliability of n-MOSFETs under DC/AC stress are investigated and results are compared among the devices with gate dielectrics fabricated by different techniques. From the results it is concluded that N/sub 2/O nitridation is a more promising technique to incorporate nitrogen into gate oxide than NH/sub 3/ nitridation both from the point of view of electrical performance and stability under CHCS and dynamic stress.<<ETX>>","PeriodicalId":206109,"journal":{"name":"1994 IEEE Hong Kong Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical performance and reliability of n-MOSFET's with gate dielectrics fabricated by different techniques\",\"authors\":\"Zeng Xu, P. Lai, W. Ng\",\"doi\":\"10.1109/HKEDM.1994.395138\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, electrical characteristics and reliability of n-MOSFETs under DC/AC stress are investigated and results are compared among the devices with gate dielectrics fabricated by different techniques. From the results it is concluded that N/sub 2/O nitridation is a more promising technique to incorporate nitrogen into gate oxide than NH/sub 3/ nitridation both from the point of view of electrical performance and stability under CHCS and dynamic stress.<<ETX>>\",\"PeriodicalId\":206109,\"journal\":{\"name\":\"1994 IEEE Hong Kong Electron Devices Meeting\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1994 IEEE Hong Kong Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1994.395138\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1994 IEEE Hong Kong Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1994.395138","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical performance and reliability of n-MOSFET's with gate dielectrics fabricated by different techniques
In this paper, electrical characteristics and reliability of n-MOSFETs under DC/AC stress are investigated and results are compared among the devices with gate dielectrics fabricated by different techniques. From the results it is concluded that N/sub 2/O nitridation is a more promising technique to incorporate nitrogen into gate oxide than NH/sub 3/ nitridation both from the point of view of electrical performance and stability under CHCS and dynamic stress.<>
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