{"title":"4/spl倍/4宽带光电开关采用vcsel","authors":"N. Rajkumar, J. McMullin, B. Keyworth","doi":"10.1109/LEOSST.1997.619090","DOIUrl":null,"url":null,"abstract":"Future optical networks which employ wavelength division multiplexing (WDM) will require switches that are bit rate/code rate transparent, and allow spatial and wavelength reconfiguration of a channel. Optoelectronic cross-bar switches (OECBS) are able to perform all the required functionalities. In this paper we describe initial work on a free-space 4/spl times/4 OECBS which utilizes a 850 nm VCSEL array on 500 /spl mu/m centers as the optical sources within the switch. The signal-to-noise ratio (SNR) of the entire system for a 2 GHz bandwidth calculated from the measured data is 24.84 dB. The principal noise source is the receiver thermal noise (SNR/sub TH/=26.43 dB). The second dominant source of noise in the present system is the laser noise, both RIN (SNR/sub RIN/=31.98) and adjacent channel electrical cross-talk noise (SNR/sub ECN/=35 dB). By employing VCSELs with higher output powers and MSMs with better responsivity, it is possible to improve the S/N ratio to a level at which the laser noise would dominate, establishing a S/N ceiling. The S/N ceiling for the present system is estimated to be /spl sim/30 dB. If further improvements in the S/N is desired, VCSELs with lower intrinsic RIN and lower device crosstalk would be required.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"4/spl times/4 broadband optoelectronic switch using VCSELs\",\"authors\":\"N. Rajkumar, J. McMullin, B. Keyworth\",\"doi\":\"10.1109/LEOSST.1997.619090\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Future optical networks which employ wavelength division multiplexing (WDM) will require switches that are bit rate/code rate transparent, and allow spatial and wavelength reconfiguration of a channel. Optoelectronic cross-bar switches (OECBS) are able to perform all the required functionalities. In this paper we describe initial work on a free-space 4/spl times/4 OECBS which utilizes a 850 nm VCSEL array on 500 /spl mu/m centers as the optical sources within the switch. The signal-to-noise ratio (SNR) of the entire system for a 2 GHz bandwidth calculated from the measured data is 24.84 dB. The principal noise source is the receiver thermal noise (SNR/sub TH/=26.43 dB). The second dominant source of noise in the present system is the laser noise, both RIN (SNR/sub RIN/=31.98) and adjacent channel electrical cross-talk noise (SNR/sub ECN/=35 dB). By employing VCSELs with higher output powers and MSMs with better responsivity, it is possible to improve the S/N ratio to a level at which the laser noise would dominate, establishing a S/N ceiling. The S/N ceiling for the present system is estimated to be /spl sim/30 dB. If further improvements in the S/N is desired, VCSELs with lower intrinsic RIN and lower device crosstalk would be required.\",\"PeriodicalId\":344325,\"journal\":{\"name\":\"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application\",\"volume\":\"82 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOSST.1997.619090\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOSST.1997.619090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
4/spl times/4 broadband optoelectronic switch using VCSELs
Future optical networks which employ wavelength division multiplexing (WDM) will require switches that are bit rate/code rate transparent, and allow spatial and wavelength reconfiguration of a channel. Optoelectronic cross-bar switches (OECBS) are able to perform all the required functionalities. In this paper we describe initial work on a free-space 4/spl times/4 OECBS which utilizes a 850 nm VCSEL array on 500 /spl mu/m centers as the optical sources within the switch. The signal-to-noise ratio (SNR) of the entire system for a 2 GHz bandwidth calculated from the measured data is 24.84 dB. The principal noise source is the receiver thermal noise (SNR/sub TH/=26.43 dB). The second dominant source of noise in the present system is the laser noise, both RIN (SNR/sub RIN/=31.98) and adjacent channel electrical cross-talk noise (SNR/sub ECN/=35 dB). By employing VCSELs with higher output powers and MSMs with better responsivity, it is possible to improve the S/N ratio to a level at which the laser noise would dominate, establishing a S/N ceiling. The S/N ceiling for the present system is estimated to be /spl sim/30 dB. If further improvements in the S/N is desired, VCSELs with lower intrinsic RIN and lower device crosstalk would be required.