A. Zagorodny, N. Voronin, I. Yunusov, G. Goshin, A. Fateev, A. Popkov
{"title":"GaAs单片集成电路用微波微带衰减器","authors":"A. Zagorodny, N. Voronin, I. Yunusov, G. Goshin, A. Fateev, A. Popkov","doi":"10.1109/EDM.2012.6310189","DOIUrl":null,"url":null,"abstract":"Fixed attenuation microstrip attenuators calculations and T-attenuators with thin-film cruciform resistor prototypes experiments are represented. In the frequency range from 0 to 40 GHz T-attenuator attenuation irregularity is no more than 0.1 dB at 6 and 3 dB. Calculations were made considering the device as a combination of microstrip lines with parasitic parameters. L-2L de-embedding technique was used for experiment analysis.","PeriodicalId":347076,"journal":{"name":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"107 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Microwave microstrip attenuators for GaAs monolithic integrated circuits\",\"authors\":\"A. Zagorodny, N. Voronin, I. Yunusov, G. Goshin, A. Fateev, A. Popkov\",\"doi\":\"10.1109/EDM.2012.6310189\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Fixed attenuation microstrip attenuators calculations and T-attenuators with thin-film cruciform resistor prototypes experiments are represented. In the frequency range from 0 to 40 GHz T-attenuator attenuation irregularity is no more than 0.1 dB at 6 and 3 dB. Calculations were made considering the device as a combination of microstrip lines with parasitic parameters. L-2L de-embedding technique was used for experiment analysis.\",\"PeriodicalId\":347076,\"journal\":{\"name\":\"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices\",\"volume\":\"107 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDM.2012.6310189\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2012.6310189","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microwave microstrip attenuators for GaAs monolithic integrated circuits
Fixed attenuation microstrip attenuators calculations and T-attenuators with thin-film cruciform resistor prototypes experiments are represented. In the frequency range from 0 to 40 GHz T-attenuator attenuation irregularity is no more than 0.1 dB at 6 and 3 dB. Calculations were made considering the device as a combination of microstrip lines with parasitic parameters. L-2L de-embedding technique was used for experiment analysis.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
