外延III-V平面纳米线:自对准、高迁移率和可转移打印

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516728

S. Fortuna, R. Dowdy, Xiuling Li

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引用次数: 2

摘要

我们在(100)和(110)GaAs衬底上外延生长了平面、自对准、无双晶和高迁移率的GaAs半导体纳米线。此外，这种平面纳米线可直接转移打印，与现有的加工技术兼容，可与各种器件集成。

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Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable

We present planar, self-aligned, twin-free, and high-mobility GaAs semiconductor nanowires epitaxially grown on (100) and (110) GaAs substrates. In addition, such planar nanowires are directly transfer-printable and compatible with existing processing technology and integratable with various devices.

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2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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