采用0.15um变质InGaAs的ka波段GaAs MMIC LNA

2016 IEEE MTT-S International Wireless Symposium (IWS) Pub Date : 2016-03-01 DOI:10.1109/IEEE-IWS.2016.7585485

Mehdi Khan, Usman Khan, Z. Peng, A. Buzdar, A. Buzdar, Lei Li, F. Lin

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引用次数: 9

摘要

本文采用0.15 μm变质InGaAs HEMT技术，设计了一种工作在36 ~ 40 GHz频率范围内的三级A类低噪声放大器。电路采用1v电源驱动，实现的OIP3 dB为22 dBm，整个频率范围内输入输出回波损耗大于8 dB，增益大于26 dB，噪声系数小于2.36 dB。最终的布局面积为4.4 × 2 mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Ka-band GaAs MMIC LNA using a 0.15um metamorphic InGaAs

A complete design of three-stage class A low-noise amplifier (LNA) operating in frequency range of 36 - 40 GHz using 0.15 μm metamorphic InGaAs HEMT technology is presented in this paper. The circuit is driven by a 1 V supply and the OIP3 dB achieved was 22 dBm with an input and output return loss of greater than 8 dB, gain of above 26 dB and noise figure below than 2.36 dB in the whole frequency range. The final layout occupies an area of 4.4 × 2 mm2.

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2016 IEEE MTT-S International Wireless Symposium (IWS)

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