利用高铝AlGaN量子阱降低内场效应

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI:10.1109/ISLC.2004.1382769

W. Chow, S. Wieczorek, A. Fischer, M. Crawford, A. Allerman, S.R. Lee

{"title":"利用高铝AlGaN量子阱降低内场效应","authors":"W. Chow, S. Wieczorek, A. Fischer, M. Crawford, A. Allerman, S.R. Lee","doi":"10.1109/ISLC.2004.1382769","DOIUrl":null,"url":null,"abstract":"Transition from heavy hole to crystal-field-split hole ground state is found to significantly reduce internal-field effects on optical properties, which should improve laser performance. The effect comes from increasing aluminum concentration in AlGaN quantum wells.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reducing internal field effects with high aluminum AlGaN quantum wells\",\"authors\":\"W. Chow, S. Wieczorek, A. Fischer, M. Crawford, A. Allerman, S.R. Lee\",\"doi\":\"10.1109/ISLC.2004.1382769\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Transition from heavy hole to crystal-field-split hole ground state is found to significantly reduce internal-field effects on optical properties, which should improve laser performance. The effect comes from increasing aluminum concentration in AlGaN quantum wells.\",\"PeriodicalId\":126641,\"journal\":{\"name\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"volume\":\"86 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2004.1382769\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2004.1382769","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

发现从重空穴到晶体场分裂空穴基态的转变显著降低了内场对光学性能的影响，这将提高激光器的性能。这种效应来自于AlGaN量子阱中铝浓度的增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reducing internal field effects with high aluminum AlGaN quantum wells

Transition from heavy hole to crystal-field-split hole ground state is found to significantly reduce internal-field effects on optical properties, which should improve laser performance. The effect comes from increasing aluminum concentration in AlGaN quantum wells.

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2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.

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