纳米多孔硅上生长的碳纳米管薄膜

CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI:10.1109/SMICND.2010.5650256

E. Czerwosz, E. Kowalska, M. Kozłowski, H. Wronka, F. Craciunoiu, M. Miu, A. Dinescu

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引用次数: 0

摘要

给出了在纳米多孔硅(NP-Si)板上生长的碳纳米管薄膜的SEM表征结果。扫描电镜研究了碳纳米管薄膜制备过程的各个阶段。结果表明，纳米硅孔的大小影响纳米碳纳米管薄膜的最终形成和粘附性。

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CNT film grown on nanoporous silicon

Results of SEM characterization of CNT film grown on nanoporous silicon (NP-Si) plate covered with 2 step PVD/CVD layer are presented. SEM studies were performed for all stages of CNT film preparation process. It was found that the size of pores in NP-Si affects the final CNT film form and adhesion.

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CAS 2010 Proceedings (International Semiconductor Conference)

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