{"title":"AlGas/GaAs高温超导的瞬态电热模型","authors":"I.A.D. Russell, P. Webb, R. G. Davis","doi":"10.1109/EDMO.1995.493705","DOIUrl":null,"url":null,"abstract":"This paper describes the self-consistent simulation of the current and temperature distributions within AlGaAs/GaAs heterojunction bipolar transistors (HBTs) during power transients. The modelling technique employed for this purpose, which has been implemented by combining a transmission line matrix (TLM) thermal diffusion simulator with The standard circuit simulator SPICE, is based on a discretised equivalent circuit model of an HBT finger. The form of this model is presented, along with examples that illustrate the utility of the simulation system in providing insight into a number of electro-thermally related phenomena associated with the AlGaAs/GaAs HBT.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Transient electro-thermal modelling of AlGas/GaAs HBTs\",\"authors\":\"I.A.D. Russell, P. Webb, R. G. Davis\",\"doi\":\"10.1109/EDMO.1995.493705\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the self-consistent simulation of the current and temperature distributions within AlGaAs/GaAs heterojunction bipolar transistors (HBTs) during power transients. The modelling technique employed for this purpose, which has been implemented by combining a transmission line matrix (TLM) thermal diffusion simulator with The standard circuit simulator SPICE, is based on a discretised equivalent circuit model of an HBT finger. The form of this model is presented, along with examples that illustrate the utility of the simulation system in providing insight into a number of electro-thermally related phenomena associated with the AlGaAs/GaAs HBT.\",\"PeriodicalId\":431745,\"journal\":{\"name\":\"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDMO.1995.493705\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDMO.1995.493705","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Transient electro-thermal modelling of AlGas/GaAs HBTs
This paper describes the self-consistent simulation of the current and temperature distributions within AlGaAs/GaAs heterojunction bipolar transistors (HBTs) during power transients. The modelling technique employed for this purpose, which has been implemented by combining a transmission line matrix (TLM) thermal diffusion simulator with The standard circuit simulator SPICE, is based on a discretised equivalent circuit model of an HBT finger. The form of this model is presented, along with examples that illustrate the utility of the simulation system in providing insight into a number of electro-thermally related phenomena associated with the AlGaAs/GaAs HBT.
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