一个2w, 62% PAE，小芯片尺寸HBT MMIC用于3v PCN应用

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628282

J. Mueller, P. Baureis, O. Berger, T. Boettner, N. Bovolon, G. Packeiser, P. Zwicknagl

{"title":"一个2w, 62% PAE，小芯片尺寸HBT MMIC用于3v PCN应用","authors":"J. Mueller, P. Baureis, O. Berger, T. Boettner, N. Bovolon, G. Packeiser, P. Zwicknagl","doi":"10.1109/GAAS.1997.628282","DOIUrl":null,"url":null,"abstract":"A 62% power added efficiency (PAE) AlGaAs-GaAs HBT MMIC power amplifier with a very small chip size of 1.2 mm/sup 2/ for use in PCN applications (1800 MHz) is described. Maximum output power is 2 W at only a single voltage supply of 3 V. The linear gain of the two-stage MMIC is 33 dB. To our knowledge this is the best combination of power performance data for wireless applications demonstrated so far for a MMIC. The chip size is more than a factor of four smaller than comparable MMICs known before. The MMIC offers the potential both for low cost production due to small chip size, single voltage supply and high performance at the same time.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"393 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A 2 W, 62% PAE, small chip size HBT MMIC for 3 V PCN applications\",\"authors\":\"J. Mueller, P. Baureis, O. Berger, T. Boettner, N. Bovolon, G. Packeiser, P. Zwicknagl\",\"doi\":\"10.1109/GAAS.1997.628282\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 62% power added efficiency (PAE) AlGaAs-GaAs HBT MMIC power amplifier with a very small chip size of 1.2 mm/sup 2/ for use in PCN applications (1800 MHz) is described. Maximum output power is 2 W at only a single voltage supply of 3 V. The linear gain of the two-stage MMIC is 33 dB. To our knowledge this is the best combination of power performance data for wireless applications demonstrated so far for a MMIC. The chip size is more than a factor of four smaller than comparable MMICs known before. The MMIC offers the potential both for low cost production due to small chip size, single voltage supply and high performance at the same time.\",\"PeriodicalId\":299287,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997\",\"volume\":\"393 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1997.628282\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1997.628282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

描述了一种62%功率增加效率(PAE)的AlGaAs-GaAs HBT MMIC功率放大器，其芯片尺寸非常小，为1.2 mm/sup 2/，用于PCN应用(1800 MHz)。最大输出功率为2w，单电源电压为3v。两级MMIC的线性增益为33 dB。据我们所知，这是迄今为止为MMIC演示的无线应用程序提供的最佳电源性能数据组合。芯片尺寸比以前已知的类似mmic小四倍以上。由于芯片尺寸小，单电压供应和高性能，MMIC提供了低成本生产的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 2 W, 62% PAE, small chip size HBT MMIC for 3 V PCN applications

A 62% power added efficiency (PAE) AlGaAs-GaAs HBT MMIC power amplifier with a very small chip size of 1.2 mm/sup 2/ for use in PCN applications (1800 MHz) is described. Maximum output power is 2 W at only a single voltage supply of 3 V. The linear gain of the two-stage MMIC is 33 dB. To our knowledge this is the best combination of power performance data for wireless applications demonstrated so far for a MMIC. The chip size is more than a factor of four smaller than comparable MMICs known before. The MMIC offers the potential both for low cost production due to small chip size, single voltage supply and high performance at the same time.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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