在InP衬底上生长具有InAs/GaSb ii型量子阱的中红外光电探测器

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562598

H. Inada, K. Miura, Y. Iguchi, Y. Kawamura, J. Murooka, H. Katayama, S. Kanno, T. Takekawa, M. Kimata

{"title":"在InP衬底上生长具有InAs/GaSb ii型量子阱的中红外光电探测器","authors":"H. Inada, K. Miura, Y. Iguchi, Y. Kawamura, J. Murooka, H. Katayama, S. Kanno, T. Takekawa, M. Kimata","doi":"10.1109/ICIPRM.2013.6562598","DOIUrl":null,"url":null,"abstract":"Infrared photodetectors with InAs/GaSb type-II quantum wells on InP substrate was fabricated and evaluated. Dark current density was 0.1mA/cm2 at 112K. Quantum efficiency at 5μm was 10%. This results show that InAs/GaSb quantum wells on InP substrate has potential for infrared image sensor.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Mid-infrared photodetectors with InAs/GaSb type-II quantum wells grown on InP substrate\",\"authors\":\"H. Inada, K. Miura, Y. Iguchi, Y. Kawamura, J. Murooka, H. Katayama, S. Kanno, T. Takekawa, M. Kimata\",\"doi\":\"10.1109/ICIPRM.2013.6562598\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Infrared photodetectors with InAs/GaSb type-II quantum wells on InP substrate was fabricated and evaluated. Dark current density was 0.1mA/cm2 at 112K. Quantum efficiency at 5μm was 10%. This results show that InAs/GaSb quantum wells on InP substrate has potential for infrared image sensor.\",\"PeriodicalId\":120297,\"journal\":{\"name\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2013.6562598\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562598","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

在InP衬底上制备了InAs/GaSb ii型量子阱红外探测器，并对其进行了评价。112K时暗电流密度为0.1mA/cm2。5μm处量子效率为10%。结果表明，在InP衬底上制备的InAs/GaSb量子阱具有应用于红外图像传感器的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Mid-infrared photodetectors with InAs/GaSb type-II quantum wells grown on InP substrate

Infrared photodetectors with InAs/GaSb type-II quantum wells on InP substrate was fabricated and evaluated. Dark current density was 0.1mA/cm2 at 112K. Quantum efficiency at 5μm was 10%. This results show that InAs/GaSb quantum wells on InP substrate has potential for infrared image sensor.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 International Conference on Indium Phosphide and Related Materials (IPRM)

自引率

0.00%

发文量