J. P. Torres, F. Fortes, M. Joao Rosario, J. Dieudonné, J. Costa Freire
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Monolithic mixers with MESFETs technology to up and down convert between C and V band
In this paper the design of singly balanced mixers to convert C to V band signals are presented. A step by step design technique is described, based on harmonic balance simulations. The mixer devices are Schottky diodes compatible with a GaAs MESFET technology. The mixer was optimised for minimum conversion losses on the widest possible bandwidth when used as an up or downconverter in order to be used on a large number of applications. The experiments show a minimum conversion losses on the range of 6 to 8 dB for both applications (up and downconverter) and a 3 dB bandwidth larger then 6 GHz.<>
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