Analysis of Different Characteristics of SOI-TFET with Ge Material as Source Pocket

For high performance device application SGOI is a better alternative to Si substrate because of its much attractive property. TFET has been proposed as possible alternative to the conventional MOSFET. In this paper, I proposed a novel SGOI Tunnel Field Effect Transistor with VDD = 0.65 Volts, using non local BTBT model for low power VLSI applications. I studied the different aspects of mole fraction of germanium in device which finally affects the characteristics such as sub-threshold swing, Ion $\mathrm{I}_{\mathrm{o}\mathrm{f}\mathrm{f}}$ ratio. In this paper optimization at various level of the device is done in their structure, these optimization indicates the result with high $\mathrm{I}_{\mathrm{o}\mathrm{n}}/\mathrm{I}_{\mathrm{o}\mathrm{f}\mathrm{f}}$ ratio of $3.39\times 10^{9}$ and sub-threshold swing of 37 mV/ decade. In this paper Miller-capacitance and threshold-voltage is also optimized with mole fraction variation of germanium.