氮掺杂超纳米晶金刚石霍尔棒器件的制备与研究

COMMAD 2012 Pub Date : 2012-12-01 DOI:10.1109/COMMAD.2012.6472415

N. Eikenberg, K. Ganesan, K. K. Lee, M. Edmonds, L. H. Willems van Beveren, S. Prawer

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引用次数: 0

摘要

利用微波辅助等离子体化学气相沉积(CVD)技术，在硅片上的非导电金刚石层上沉积了一层氮掺杂的超纳米金刚石(N-UNCD)。然后使用光学光刻和干蚀刻技术将这种结构塑造成各种尺寸的霍尔杆装置。使用无低温稀释冰箱在不同温度下研究了器件的电学特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fabrication and investigation of Nitrogen doped ultra-nano-crystalline diamond Hall-bar devices

Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is then shaped into Hall-bar devices of various dimensions using optical lithography and dry-etching techniques. The devices' electrical properties are investigated at various temperatures using a cryogen-free dilution refrigerator.

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COMMAD 2012

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