用于多标准射频前端的0.6 v /1.2 v低功耗单端CMOS LNA

A. Slimane, Sid-Ahmed Tedjini-Bailiche, A. Taibi, M. Belaroussi, D. Maafri
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引用次数: 5

摘要

本文设计了一种低功耗单端CMOS LNA,可用于GPS、GSM (DCS1800、PCS1900)、3G (UMTS)、WLAN b/g和LTE等可重构应用。基于宽带输入匹配,LNA级覆盖所有感兴趣的频带,同时实现高增益、低噪声和低功耗之间的良好权衡。对于多标准瞄准,LNA使用高输出谐振阻抗和开关技术选择所需的频段。采用0.13 μm CMOS技术实现的仿真LNA在Vdd = 1.2 V时的功率增益高于30 dB,噪声系数低于2.3 dB,输入回波损耗小于-12 dB,在1.5 ~ 2.6 GHz频段的IIP3优于-19 dBm。此外,在Vdd = 0.6 V的低模式下,功率增益优于19 dB,噪声系数约为2.9 dB。对于上述所有标准,建议的LNA分别从1.2 V和0.6 V的电源电压消耗7.5 mW和2.7 mW。
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A 0.6-V/1.2-V low power single ended CMOS LNA for multi-standard RF front-ends
This paper presents a design of a low power single ended CMOS LNA for reconfigurable applications including GPS, GSM (DCS1800, PCS1900), 3G (UMTS), WLAN b/g and LTE. Based on a wideband input matching, the LNA stages cover all band of interest while achieving a good trade-off between high gain, low noise figure and low power consumption. For multi-standard aim, the LNA selects the desired bands using a high output resonant impedance with a switching technique. Implemented in 0.13-μm CMOS technology, the simulated LNA results at Vdd = 1.2 V perform a power gain higher than 30 dB, a noise figure below 2.3 dB, an input return loss less than -12 dB, and an IIP3 better than -19 dBm in frequency band 1.5-2.6 GHz. Besides, for the low mode at Vdd = 0.6 V, the power gain is better than 19 dB and the noise figure is about 2.9 dB. For all mentioned standards, the proposed LNA consumes 7.5 mW and 2.7 mW from supply voltage of 1.2 V and 0.6 V, respectively.
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