{"title":"亚微米高应变In0.8Ga0.2As/AlAs谐振隧穿二极管物理模型模拟研究","authors":"W. M. Jubadi, M. A. Md Zawawi, M. Missous","doi":"10.1109/ASDAM.2014.6998671","DOIUrl":null,"url":null,"abstract":"This work presents a physical modelling for an in-house fabricated submicron InGaAs/AlAs double barrier Resonant Tunnelling diode (RTD). The modelling is developed in ATLAS SILVACO to extend the study of advanced III-V quantum devices. The Negative Differential Resistance (NDR) current and the peak-to-valley current ratio (PVCR) are simulated and validated with measurement data. The effects of structural parameters such as barrier width, spacer width, quantum well thickness and doping on current-voltage characteristics of RTD are investigated.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Simulative study on physical modelling of submicrometer highly-strained In0.8Ga0.2As/AlAs resonant tunnelling diode\",\"authors\":\"W. M. Jubadi, M. A. Md Zawawi, M. Missous\",\"doi\":\"10.1109/ASDAM.2014.6998671\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a physical modelling for an in-house fabricated submicron InGaAs/AlAs double barrier Resonant Tunnelling diode (RTD). The modelling is developed in ATLAS SILVACO to extend the study of advanced III-V quantum devices. The Negative Differential Resistance (NDR) current and the peak-to-valley current ratio (PVCR) are simulated and validated with measurement data. The effects of structural parameters such as barrier width, spacer width, quantum well thickness and doping on current-voltage characteristics of RTD are investigated.\",\"PeriodicalId\":313866,\"journal\":{\"name\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2014.6998671\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998671","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulative study on physical modelling of submicrometer highly-strained In0.8Ga0.2As/AlAs resonant tunnelling diode
This work presents a physical modelling for an in-house fabricated submicron InGaAs/AlAs double barrier Resonant Tunnelling diode (RTD). The modelling is developed in ATLAS SILVACO to extend the study of advanced III-V quantum devices. The Negative Differential Resistance (NDR) current and the peak-to-valley current ratio (PVCR) are simulated and validated with measurement data. The effects of structural parameters such as barrier width, spacer width, quantum well thickness and doping on current-voltage characteristics of RTD are investigated.
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