单壁碳纳米管;电子应用的历史与未来展望

S. Jin
{"title":"单壁碳纳米管;电子应用的历史与未来展望","authors":"S. Jin","doi":"10.1109/AM-FPD.2016.7543611","DOIUrl":null,"url":null,"abstract":"For more than the last 50 years, tremendous researchers have managed to drive revolutionary technology by shrinking silicon transistors, the key building blocks for all computing technology. However, as transistors are approaching fundamental roadblocks which cannot still be in a fashion to be smaller from silicon, researchers are therefore looking for materials to replace silicon. In this sense, among a variety of candidates beyond silicon, single walled carbon nanotubes (SWNTs) has been regarded as one of viable options because of ideal electrostatic coupling coming from one dimensional structure, the ability to operate at low voltages, and their exceptional electrical-performance in devices less than 10 nm. However, the road to producing transistors from single-walled carbon nanotubes (SWNTs) has been hedged about heterogeneous electrical properties (i.e., semiconducting vs. metallic) and controllably positioning these tiny molecular cylinders (~1 nm diameter). To address this issue, one of the most fascinating methods has been reported as \"thermocapillarity enabled purification (TcEP)\" for obtaining arrays of highly purified semiconducting CNTs with its process scalability and compatibility with the state of the art Si technology. In this talk, we will overview key technologies of TcEP and address future aspects on electronic application based on pristine form of SWNTs after purification.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Single-walled carbon nanotubes (SWNTs); history and future prospects for electronic applications\",\"authors\":\"S. Jin\",\"doi\":\"10.1109/AM-FPD.2016.7543611\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For more than the last 50 years, tremendous researchers have managed to drive revolutionary technology by shrinking silicon transistors, the key building blocks for all computing technology. However, as transistors are approaching fundamental roadblocks which cannot still be in a fashion to be smaller from silicon, researchers are therefore looking for materials to replace silicon. In this sense, among a variety of candidates beyond silicon, single walled carbon nanotubes (SWNTs) has been regarded as one of viable options because of ideal electrostatic coupling coming from one dimensional structure, the ability to operate at low voltages, and their exceptional electrical-performance in devices less than 10 nm. However, the road to producing transistors from single-walled carbon nanotubes (SWNTs) has been hedged about heterogeneous electrical properties (i.e., semiconducting vs. metallic) and controllably positioning these tiny molecular cylinders (~1 nm diameter). To address this issue, one of the most fascinating methods has been reported as \\\"thermocapillarity enabled purification (TcEP)\\\" for obtaining arrays of highly purified semiconducting CNTs with its process scalability and compatibility with the state of the art Si technology. In this talk, we will overview key technologies of TcEP and address future aspects on electronic application based on pristine form of SWNTs after purification.\",\"PeriodicalId\":422453,\"journal\":{\"name\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"93 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2016.7543611\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2016.7543611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

在过去的50多年里,大量的研究人员成功地通过缩小硅晶体管来推动革命性的技术,硅晶体管是所有计算技术的关键组成部分。然而,由于晶体管正在接近基本的障碍,仍然不能以一种比硅更小的方式,研究人员因此正在寻找替代硅的材料。从这个意义上说,在硅之外的各种候选材料中,单壁碳纳米管(SWNTs)被认为是可行的选择之一,因为它具有理想的静电耦合,来自一维结构,在低电压下工作的能力,以及在小于10纳米的器件中具有出色的电性能。然而,从单壁碳纳米管(SWNTs)生产晶体管的道路一直受到不均匀电学性质(即半导体与金属)和控制这些微小分子圆柱体(直径约1nm)定位的限制。为了解决这个问题,最吸引人的方法之一被报道为“热毛细纯化(TcEP)”,用于获得高度纯化的半导体碳纳米管阵列,其工艺可扩展性和与最先进的Si技术的兼容性。在这次演讲中,我们将概述TcEP的关键技术,并讨论基于纯化后原始形式的单壁碳纳米管电子应用的未来方面。
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Single-walled carbon nanotubes (SWNTs); history and future prospects for electronic applications
For more than the last 50 years, tremendous researchers have managed to drive revolutionary technology by shrinking silicon transistors, the key building blocks for all computing technology. However, as transistors are approaching fundamental roadblocks which cannot still be in a fashion to be smaller from silicon, researchers are therefore looking for materials to replace silicon. In this sense, among a variety of candidates beyond silicon, single walled carbon nanotubes (SWNTs) has been regarded as one of viable options because of ideal electrostatic coupling coming from one dimensional structure, the ability to operate at low voltages, and their exceptional electrical-performance in devices less than 10 nm. However, the road to producing transistors from single-walled carbon nanotubes (SWNTs) has been hedged about heterogeneous electrical properties (i.e., semiconducting vs. metallic) and controllably positioning these tiny molecular cylinders (~1 nm diameter). To address this issue, one of the most fascinating methods has been reported as "thermocapillarity enabled purification (TcEP)" for obtaining arrays of highly purified semiconducting CNTs with its process scalability and compatibility with the state of the art Si technology. In this talk, we will overview key technologies of TcEP and address future aspects on electronic application based on pristine form of SWNTs after purification.
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