金属-半导体结构中的传热模型

G. Khlyap, P. Sydorchuk
{"title":"金属-半导体结构中的传热模型","authors":"G. Khlyap, P. Sydorchuk","doi":"10.1109/ASDAM.2002.1088511","DOIUrl":null,"url":null,"abstract":"The paper reports on the first results of heat transfer modeling performed for metal-semiconductor structures based on A/sup 2/B/sup 6/ compounds. Current-voltage dependences were studied and numerically simulated in order to clarify the effect of thermal generation from the metallic contacts regions observed under electric field application. It is shown that one of principal parameters of the current-voltage dependence (determining the mode of operation of an active device), namely the non-ideality factor, is strongly influenced by the heat flowing through the contact regions.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"167 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Heat transfer modeling in metal-semiconductor structures\",\"authors\":\"G. Khlyap, P. Sydorchuk\",\"doi\":\"10.1109/ASDAM.2002.1088511\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper reports on the first results of heat transfer modeling performed for metal-semiconductor structures based on A/sup 2/B/sup 6/ compounds. Current-voltage dependences were studied and numerically simulated in order to clarify the effect of thermal generation from the metallic contacts regions observed under electric field application. It is shown that one of principal parameters of the current-voltage dependence (determining the mode of operation of an active device), namely the non-ideality factor, is strongly influenced by the heat flowing through the contact regions.\",\"PeriodicalId\":179900,\"journal\":{\"name\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"volume\":\"167 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2002.1088511\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088511","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文报道了基于A/sup 2/B/sup 6/化合物的金属-半导体结构传热模型的初步结果。为了阐明在电场作用下观察到的金属接触区产生热的影响,研究了电流-电压依赖性并进行了数值模拟。结果表明,电流-电压依赖性(决定有源器件的工作模式)的主要参数之一,即非理想性因子,受到流经接触区域的热量的强烈影响。
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Heat transfer modeling in metal-semiconductor structures
The paper reports on the first results of heat transfer modeling performed for metal-semiconductor structures based on A/sup 2/B/sup 6/ compounds. Current-voltage dependences were studied and numerically simulated in order to clarify the effect of thermal generation from the metallic contacts regions observed under electric field application. It is shown that one of principal parameters of the current-voltage dependence (determining the mode of operation of an active device), namely the non-ideality factor, is strongly influenced by the heat flowing through the contact regions.
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