碳掺杂对热电子俘获的影响

H. Haddad, L. Forbes, P. Burke, W. Richling
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引用次数: 2

摘要

在亚微米MOS器件中,热电子的注入严重限制了器件的应用和可靠性。结果表明,碳掺杂可以显著减缓或延缓这一老化过程和MOS晶体管阈值电压随时间的变化。碳掺杂可以通过碳掺杂衬底和碳离子注入两种方法来实现。
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Carbon doping effects on hot electron trapping
The injection of hot electrons in submicrometer MOS devices constitutes a serious limitation on the application and reliability of these devices. It is shown that carbon doping can significantly reduce or delay this ageing process and the shifts of threshold voltages of MOS transistors with time. Carbon doping has been achieved by both using carbon-doped substrates and by ion implantation of carbon.<>
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