LPCVD与PECVD碳化硅复合制备倏逝波导

2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) Pub Date : 2016-04-01 DOI:10.1109/NEMS.2016.7758311

Yu Xin, G. Pandraud, L. Pakula, B. Morana, P. French

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引用次数: 3

摘要

SiC作为MEMS领域的一种极具发展前景的材料，被广泛用于制造传感器。考虑到碳化硅的制备潜力和光学性能，本文选择碳化硅作为倏逝波导传感器的核心材料。采用LPCVD和PECVD相结合的方法制备波导。为了减少耦合损耗和错位效应，设计了在波导输入输出端增加三维锥形耦合器，并研究了一种新的斜率传递方法来制造锥形斜率。在最初的实验中，我们获得了16.7°的斜率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Combination of LPCVD and PECVD SiC in fabricating evanescent waveguides

As a promising material in MEMS field, SiC is widely used to fabricate sensors in many applications. Considering its fabrication potential and optical properties, SiC was chosen as the core material of evanescent waveguide sensor in this paper. LPCVD and PECVD deposition were combined in fabricating the waveguide. To reduce the coupling loss and misalignment effect, 3D tapered couplers were designed to be added to the input and output of the waveguide and a novel slope transfer method was investigated to fabricate the taper slope. In initial experiments we have achieved a slope of 16.7°.

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2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

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